UNISONIC TECHNOLOGIES CO., LTD
2SC2712
AUDIO FREQUENCY
AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current:
V
CEO
=50V, I
C
=150mA (Max.)
* Excellent h
FE
Linearity:
h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.)
* High h
FE
* Low Noise
NPN SILICON TRANSISTOR
Lead-free:
2SC2712L
Halogen-free:2SC2712G
ORDERING INFORMATION
Normal
2SC2712-x-AE3-R
2SC2712-x-AL3-R
Ordering Number
Lead Free
Halogen Free
2SC2712L-x-AE3-R 2SC2712G-x-AE3-R
2SC2712L-x-AL3-R 2SC2712G-x-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
2SC2712-Y
2SC2712-G
2SC2712-L
LY
L: Lead Free
G: Halogen Free
LG
L: Lead Free
G: Halogen Free
LL
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-029.E
2SC2712
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
J
+125
°С
Storage Temperature
T
STG
-55 ~ +125
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°С, unless otherwise stated)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transistor Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
ob
NF
TEST CONDITIONS
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10KΩ
MIN
TYP
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
μA
μA
V
MHz
pF
dB
70
0.1
80
2.0
1.0
CLASSIFICATION OF h
FE
RANK
RANGE
Y
120~240
G
200~400
L
350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-029.E
2SC2712
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(mA)
DC Current Gain, h
FE
3000
Transistion Frequency, f
T
(MHz)
1000
500
300
100
50
30
f
T
- I
C
Common Emitter
V
CE
=10V
Ta=25°С
3000
Transistion Frequency, f
T
(MHz)
I
B
- V
BE
Common Emitter
1000 V
CE
=10V
500
300
100
50
30
10
5
3
1
0.5
0.3
0
Ta=100°С
25°С
-25°С
10
0.1 0.3 1
3
10 30 100 300
Collector Current, I
C
(mA)
h Parameter, I
C
Common Emitter
BL V
CE
=12V, f=270Hz, T
a
=25°С
GR
Y
O BL
h
ie
×KΩ
Y
GR
BL
O
Y
GR
h
oe
×µS
O
0.2 0.4
0.6 0.8 1.0 1.2
Base-Emitter Voltage, V
BE
(V)
2000
1000
500
300
h Parameter
100
50
30
10
5
3
1
0.5
0.3
0.1
0.1
h Parameter, V
CE
2000 Common Emitter
1000
500 I
C
=2mA, T
a
=25°С, f=270Hz
300
h Parameter
100
50
30
10
BL
5
GR
3
1 Y
0.5 O
0.3
O Y GR
BL
h
ie
×KΩ
BL
GR h
re
Y
O
h
oe
×µS
BL
GR
Y
h
re
×10
-4
O
Y BL GR h ×10-
4
re
O
0.3
1
3
10
30
Collector Current, I
C
(mA)
0.1
100 300
0.5 1
3
10
30
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC2712
TYPICAL CHARACTERISTICS(Cont.)
250
200
150
100
50
0
0
P
C
- Ta
NPN SILICON TRANSISTOR
25
50
75
100
125
Ambient Temperature, Ta (°С)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-029.E
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