2N5609 datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N5609

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2N5609: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size64KB，1 Pages; ManufacturerInchange Semiconductor

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2N5609 Overview

Transistor

2N5609 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	5 A
Configuration	Single
Minimum DC current gain (hFE)	70
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	25 W
surface mount	NO
Base Number Matches	1

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Power Transistors

INCHANGE

2N5609

Silicon PNP Transistors

Features

With TO-66 package

Designed for use as high-frequency drivers in audio amplifier

Absolute Maximum Ratings Tc=25

SYMBOL

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

5.0

25

150

-55~150

RATING

80

5.0

UNIT

V

A

W

TO-66

Electrical Characteristics Tc=25

SYMBOL

I

CBO

I

EBO

I

CEO

V

CBO

V

(BR)CEO

V

EBO

V

CEsat-1

V

CEsat-2

V

CEsat-3

V

CEsat-4

h

FE-1

h

FE-2

h

FE-3

h

FE-4

V

BE(sat)1

V

BE(sat)2

V

BE(sat)3

f

T

t

f

t

s

PARAMETER

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-emitter saturation voltages

Forward current transfer ratio

Base-emitter saturation voltages

Transition frequency at f = 1MHz

Fall time

Tum-off storage time

I

C

=1A,V

CE

=2V

1.0

V

I

C

=2.5A,V

CE

=5V

70

200

I

C

=1A; I

B

=0.1A

0.5

V

I

C

=10mA,I

B

=0

80

V

CONDITIONS

V

CB

=80V;I

E

=0

V

EB

=5V, I

C

=0

MIN

MAX

10

UNIT

A

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