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CMSD2005SBKLEADFREE

Description
Rectifier Diode, 1 Phase, 2 Element, 0.225A, 350V V(RRM), Silicon, SOT-323, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size550KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMSD2005SBKLEADFREE Overview

Rectifier Diode, 1 Phase, 2 Element, 0.225A, 350V V(RRM), Silicon, SOT-323, 3 PIN

CMSD2005SBKLEADFREE Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationHIGH VOLTAGE
Minimum breakdown voltage350 V
ConfigurationSERIES CONNECTED, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current4 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.225 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.275 W
Maximum repetitive peak reverse voltage350 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.05 µs
Reverse test voltage280 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

CMSD2005SBKLEADFREE Preview

CMSD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD2005S
contains two (2) High Voltage Silicon Switching
Diodes, manufactured by the epitaxial planar process,
epoxy molded in a SOT-323 surface mount package,
designed for applications requiring high voltage
capability.
MARKING CODE: B5D
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
300
350
200
225
625
4.0
1.0
275
-65 to +150
455
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=280V
100
IR
VR=280V, TA=150°C
100
BVR
IR=100μA
350
VF
IF=20mA
0.87
VF
VF
CT
trr
IF=100mA
IF=200mA
VR=0, f=1.0MHz
IR=IF=30mA, Irr=3.0mA, RL=100Ω
1.0
1.25
5.0
50
UNITS
nA
μA
V
V
V
V
pF
ns
R1 (8-February 2010)
CMSD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: B5D
R1 (8-February 2010)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s
LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
w w w. c e n t r a l s e m i . c o m
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