CMXD2004SLEADFREE datasheet, PDF

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CMXD2004SLEADFREE: DescriptionRectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6; CategoryDiscrete semiconductor diode; File Size426KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMXD2004SLEADFREE Overview

Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6

CMXD2004SLEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.225 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	300 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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CMXD2004S

CMXD2004SR

SURFACE MOUNT

DUAL PAIR, IN-SERIES

HIGH VOLTAGE

SILICON SWITCHING DIODES

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXD2004S and

CMXD2004SR consists of dual, in-series pairs of high

voltage silicon switching diodes, manufactured in a

SUPERmini™ SOT-26 surface mount package, and

designed for high voltage switching applications. This

device can be configured as a 1200V switching diode,

or as a bridge rectifier. See optional mounting pad

configurations on following page.

MARKING CODES: CMXD2004S: CX04S

CMXD2004SR: C04SR

SOT-26 CASE

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Forward Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IFRM

IFSM

TJ, Tstg

240

300

200

225

625

4.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

BVR

trr

VR=240V

VR=240V, TA=150°C

IR=100μA

IF=100mA

VR=0, f=1.0MHz

IF=IR=30mA, Irr=3.0mA, RL=100Ω

300

1.0

5.0

100

UNIT

μA

R4 (25-May 2012)

CMXD2004SLEADFREE Related Products

	CMXD2004SLEADFREE	CMXD2004SRBKTIN/LEAD	CMXD2004SBKLEADFREE	CMXD2004SRBKLEADFREE	CMXD2004SRTRLEADFREE	CMXD2004SRLEADFREE
Description	Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6	Diode,	Diode,	Diode,	Diode,	Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6
Is it Rohs certified?	conform to	incompatible	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	compliant	unknown	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum power dissipation	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
Maximum repetitive peak reverse voltage	300 V	300 V	300 V	300 V	300 V	300 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES	YES	YES	YES
JESD-609 code	e3	-	-	e3	e3	e3
Humidity sensitivity level	1	-	-	1	1	1
Terminal surface	Matte Tin (Sn)	-	-	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN (315)
Maximum forward voltage (VF)	-	1 V	1 V	1 V	1 V	-
Maximum reverse current	-	100 µA	100 µA	100 µA	100 µA	-
Reverse test voltage	-	240 V	240 V	240 V	240 V	-

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