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CMXD2004SRLEADFREE

Description
Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6
CategoryDiscrete semiconductor    diode   
File Size426KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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CMXD2004SRLEADFREE Overview

Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6

CMXD2004SRLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionSUPERMINI-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.225 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMATTE TIN (315)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
CMXD2004S
CMXD2004SR
SURFACE MOUNT
DUAL PAIR, IN-SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD2004S and
CMXD2004SR consists of dual, in-series pairs of high
voltage silicon switching diodes, manufactured in a
SUPERmini™ SOT-26 surface mount package, and
designed for high voltage switching applications. This
device can be configured as a 1200V switching diode,
or as a bridge rectifier. See optional mounting pad
configurations on following page.
MARKING CODES: CMXD2004S: CX04S
CMXD2004SR: C04SR
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
240
300
200
225
625
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
IR
BVR
VF
CJ
trr
VR=240V
VR=240V, TA=150°C
IR=100μA
IF=100mA
VR=0, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100Ω
300
1.0
5.0
50
100
100
UNIT
nA
μA
V
V
pF
ns
R4 (25-May 2012)

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Description Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6 Diode, Diode, Diode, Diode, Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6
Is it Rohs certified? conform to incompatible conform to conform to conform to conform to
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code compliant unknown compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum power dissipation 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
Maximum repetitive peak reverse voltage 300 V 300 V 300 V 300 V 300 V 300 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES YES YES YES
JESD-609 code e3 - - e3 e3 e3
Humidity sensitivity level 1 - - 1 1 1
Terminal surface MATTE TIN (315) - - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum forward voltage (VF) - 1 V 1 V 1 V 1 V -
Maximum reverse current - 100 µA 100 µA 100 µA 100 µA -
Reverse test voltage - 240 V 240 V 240 V 240 V -

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