PDM41024
1 Megabit Static RAM
128K x 8-Bit
Features
s
High-speed access times
Com’l: 10, 12, 15, 17 and 20 ns
Ind’l: 12, 15, 17 and 20 ns
s
Low power operation (typical)
- PDM41024SA
Active: 400 mW
Standby: 150 mW
- PDM41024LA
Active: 350 mW
Standby: 100 mW
s
Single +5V (±10%) power supply
s
TTL-compatible inputs and outputs
s
Packages
Plastic SOJ (300 mil) - TSO
Plastic SOJ (400 mil) - SO
Plastic TSOP - T
1
2
3
4
5
6
7
8
9
10
11
12
Description
The PDM41024 is a high-performance CMOS static
RAM organized as 131,072 x 8 bits. This product is
produced in Paradigm’s proprietary CMOS
technology which offers the designer the highest
speed parts. Writing is accomplished when the write
enable (WE) and the chip enable (CE1) inputs are
both LOW and CE2 is HIGH. Reading is
accomplished when WE and CE2 remain HIGH and
CE1 and OE are both LOW.
The PDM41024 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41024 comes in two versions,
the standard power version PDM41024SA and a low
power version the PDM41024LA. The two versions
are functionally the same and only differ in their
power consumption.
The PDM41024 is available in a 32-pin plastic TSOP,
300-mil and 400-mil plastic SOJ.
Functional Block Diagram
Rev. 2.1 - 7/17/96
4-25
PDM41024
Pin Configuration
TSOP
SOJ
Pin Description
Name
A16-A0
I/O7-I/O0
OE
WE
CE1, CE2
NC
V
CC
V
SS
Description
Address Inputs
Data Inputs/Outputs
Output Enable Input
Write Enable Input
Chip Enable Inputs
No Connect
Power (+5V)
Ground
Truth Table
(1)
OE
X
X
L
X
H
WE
X
X
H
L
H
CE1
H
X
L
L
L
CE2
X
L
H
H
H
I/O
Hi-Z
Hi-Z
D
OUT
D
IN
Hi-Z
MODE
Standby
Standby
Read
Write
Output Disable
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–55 to +125
–55 to +125
1.0
50
Ind.
–0.5 to +7.0
–65 to +135
–65 to +150
1.0
50
Unit
V
°C
°C
W
mA
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
4-26
Rev. 2.1 - 7/17/96
PDM41024
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
PDM41024SA
Symbol
I
LI
I
LO
Parameter
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC
= MAX., V
IN
= V
SS
to V
CC
V
CC
= MAX.,
CE1 = V
IH
and CE2 = V
IL,
V
OUT
= V
SS
to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
Max.
5
5
PDM41024LA
Min.
–5
–5
Max.
5
5
Unit
µA
µA
1
2
3
4
5
6
7
8
9
V
IL
V
IH
V
OL
V
OH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OL
= 10 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
–0.5
(1)
2.2
—
—
2.4
0.8
6.0
0.4
0.5
—
–0.5
(1)
2.2
—
—
2.4
0.8
6.0
0.4
0.5
—
V
V
V
V
V
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE1 = V
IL
and CE2 = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE1 = V
IH
and CE2 = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE1
≥
V
HC
and CE2
≤
V
LC
f=0
V
CC
= Max.,
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
-12
-15
-17
-20
Unit
mA
mA
Power Com’l. Com’l Ind. Com’l Ind. Com’l Ind. Com’l Ind.
SA
250
230
240
185
195
165
175
155
165
LA
230
210
220
165
175
155
165
140
150
SA
LA
SA
LA
80
75
20
10
70
65
20
10
70
65
25
10
55
50
10
5
55
50
15
10
50
45
10
5
50
45
15
10
45
40
10
5
45
40
15
10
mA
mA
mA
mA
NOTES: All values are maximum guaranteed values.
V
LC
≤
0.2V, V
HC
≥
V
CC
– 0.2V
Capacitance
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Max.
8
8
Unit
pF
pF
10
11
12
NOTE:1. This parameter is determined by device characterization but is not production tested.
Rev. 2.1 - 7/17/96
4-27
PDM41024
AC Test Conditions
Input pulse levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
V
SS
to 3.0V
3 ns
1.5V
1.5V
See Figures 1 and 2
Figure 1. Output Load Equivalent
Figure 2. Output Load Equivalent
(for t
LZCE
, t
HZCE
, t
LZWE
, t
HZWE
, t
LZOE
,
t
HZOE
)
Figure 3.
4-28
Rev. 2.1 - 7/17/96
PDM41024
Read Cycle No. 1
(4, 5)
1
2
Read Cycle No. 2
(2, 4, 6)
3
4
5
6
7
AC Electrical Characteristics
Description
READ Cycle
READ cycle time
Address access time
Chip enable access time
Output hold from address change
Chip enable to output in low Z
(1,3)
Chip disable to output in high Z
(1,2,3)
Chip enable to power up time
(3)
Chip disable to power down time
(3)
Output enable access time
Output enable to output in low Z
(1,3)
Output disable to output in high Z
(1,3)
Sym
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
0
6
0
10
6
0
6
3
5
6
0
12
6
0
6
-10
(7)
-12
(7)
-15
-17
-20
8
ns
20
20
ns
ns
ns
ns
8
ns
ns
20
6
ns
ns
ns
6
ns
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units
10
10
10
3
5
6
0
15
6
0
6
12
12
12
3
5
7
0
17
6
0
15
15
15
3
5
7
0
17
17
17
3
5
20
9
10
11
12
4-29
Notes referenced are after Data Retention Table.
Rev. 2.1 - 7/17/96
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