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GBU603C2G

Description
Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, GBU, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size214KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GBU603C2G Overview

Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, GBU, 4 PIN

GBU603C2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Maximum non-repetitive peak forward current175 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfacePURE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
GBU601 thru GBU607
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated Single-Phase Bridge Rectifier
- Ideal for printed circuit board
- High case dielectric strength of 1500 VRMS
- High surge current capability
- Typical IR less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
GBU
MECHANICAL DATA
Case:
GBU
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Polarity:
As marked
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Rating of fusing ( t<8.3ms)
Maximum Instantaneous Forward Voltage (Note 1)
I
F
= 3 A
I
F
= 6 A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
GBU
601
50
35
50
GBU
602
100
70
100
GBU
603
200
140
200
GBU
604
400
280
400
6
175
127
1.0
1.1
5
500
211
2
21
- 55 to +150
- 55 to +150
94
O
GBU
605
600
420
600
GBU
606
800
560
800
GBU
607
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
Cj
R
θjC
R
θjA
T
J
T
STG
μA
pF
C/W
O
O
Typical junction capacitance per leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Note 2: Measured at 1MHz and applied Reverse bias of 4.0V DC
Document Number: DS_D1311028
Version: H13

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