M368L6423FTN-CC4 datasheet, PDF

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M368L6423FTN-CC4: DescriptionDDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184; Categorystorage storage; File Size432KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M368L6423FTN-CC4 Overview

DDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184

M368L6423FTN-CC4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	4294967296 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	3.4 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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128MB, 265MB, 512MB Unbuffered DIMM

DDR SDRAM

DDR SDRAM Unbuffered Module

(DDR400 Module)

184pin Unbuffered Module based on 256Mb F-die

with 64/72-bit Non ECC/ECC

Revision 1.1

August. 2003

Rev. 1.1 August. 2003

M368L6423FTN-CC4 Related Products

	M368L6423FTN-CC4	M381L6423FTM-LC4	M368L3223FTN-CC4	M381L3223FTM-CC4	M368L3223FTN-LC4	M368L6423FTN-LC4	M381L3223FTM-LC4	M381L6423FTM-CC4	M368L1624FTM-CC4	M368L1624FTM-LC4
Description	DDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 32MX64, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 32MX64, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 64MX72, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184	DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184	184	184	184	184	184	184	184	184
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns	0.65 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	4294967296 bit	4831838208 bit	2147483648 bit	2415919104 bit	2147483648 bit	4294967296 bit	2415919104 bit	4831838208 bit	1073741824 bit	1073741824 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	72	64	72	64	64	72	72	64	64
Humidity sensitivity level	1	1	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	184	184	184	184	184	184	184	184	184	184
word count	67108864 words	67108864 words	33554432 words	33554432 words	33554432 words	67108864 words	33554432 words	67108864 words	16777216 words	16777216 words
character code	64000000	64000000	32000000	32000000	32000000	64000000	32000000	64000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64MX64	64MX72	32MX64	32MX72	32MX64	64MX64	32MX72	64MX72	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225	225	225	225
power supply	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum slew rate	3.4 mA	3.83 mA	2.8 mA	3.15 mA	2.8 mA	3.4 mA	3.15 mA	3.83 mA	1.52 mA	1.52 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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