|
TM4C123GH6ZRBT7R |
TM4C123GH6ZRBI7 |
TM4C123GH6ZRBT7 |
TM4C123GH6ZRBI7R |
| Description |
High performance 32-bit ARM® Cortex®-M4F based MCU 157-BGA MICROSTAR JUNIOR -40 to 105 |
High performance 32-bit ARM® Cortex®-M4F based MCU 157-BGA MICROSTAR JUNIOR -40 to 85 |
High performance 32-bit ARM® Cortex®-M4F based MCU 157-BGA MICROSTAR JUNIOR -40 to 105 |
High performance 32-bit ARM® Cortex®-M4F based MCU 157-BGA MICROSTAR JUNIOR -40 to 85 |
| Brand Name |
Texas Instruments |
Texas Instruments |
Texas Instruments |
Texas Instruments |
| Is it lead-free? |
Lead free |
Lead free |
Lead free |
Lead free |
| Is it Rohs certified? |
conform to |
conform to |
conform to |
conform to |
| Maker |
Texas Instruments |
Texas Instruments |
Texas Instruments |
Texas Instruments |
| Parts packaging code |
BGA |
BGA |
BGA |
BGA |
| package instruction |
VFBGA, |
VFBGA, |
VFBGA, |
VFBGA, |
| Contacts |
157 |
157 |
157 |
157 |
| Reach Compliance Code |
compli |
compli |
compli |
compli |
| Factory Lead Time |
6 weeks |
6 weeks |
6 weeks |
6 weeks |
| Has ADC |
YES |
YES |
YES |
YES |
| bit size |
32 |
32 |
32 |
32 |
| boundary scan |
YES |
YES |
YES |
YES |
| CPU series |
CORTEX-M4F |
CORTEX-M4F |
CORTEX-M4F |
CORTEX-M4F |
| maximum clock frequency |
25 MHz |
25 MHz |
25 MHz |
25 MHz |
| DAC channel |
NO |
NO |
NO |
NO |
| DMA channel |
YES |
YES |
YES |
YES |
| Format |
FLOATING POINT |
FLOATING POINT |
FLOATING POINT |
FLOATING POINT |
| Integrated cache |
YES |
YES |
YES |
YES |
| JESD-30 code |
S-PBGA-B157 |
S-PBGA-B157 |
S-PBGA-B157 |
S-PBGA-B157 |
| JESD-609 code |
e1 |
e1 |
e1 |
e1 |
| length |
9 mm |
9 mm |
9 mm |
9 mm |
| low power mode |
YES |
YES |
YES |
YES |
| Humidity sensitivity level |
3 |
3 |
3 |
3 |
| Number of DMA channels |
32 |
32 |
32 |
32 |
| Number of I/O lines |
120 |
120 |
120 |
120 |
| Number of serial I/Os |
21 |
21 |
21 |
21 |
| Number of terminals |
157 |
157 |
157 |
157 |
| Number of timers |
12 |
12 |
12 |
12 |
| On-chip data RAM width |
8 |
8 |
8 |
8 |
| On-chip program ROM width |
8 |
8 |
8 |
8 |
| Maximum operating temperature |
105 °C |
85 °C |
105 °C |
85 °C |
| Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
-40 °C |
| PWM channel |
YES |
YES |
YES |
YES |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| encapsulated code |
VFBGA |
VFBGA |
VFBGA |
VFBGA |
| Package shape |
SQUARE |
SQUARE |
SQUARE |
SQUARE |
| Package form |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) |
260 |
260 |
260 |
260 |
| RAM (bytes) |
32768 |
32768 |
32768 |
32768 |
| RAM (number of words) |
32 |
32 |
32 |
32 |
| rom(word) |
262144 |
262144 |
262144 |
262144 |
| ROM programmability |
FLASH |
FLASH |
FLASH |
FLASH |
| Maximum seat height |
1 mm |
1 mm |
1 mm |
1 mm |
| speed |
80 MHz |
80 MHz |
80 MHz |
80 MHz |
| Maximum slew rate |
58.7 mA |
58.7 mA |
58.7 mA |
54.9 mA |
| Maximum supply voltage |
1.32 V |
1.32 V |
1.32 V |
1.32 V |
| Minimum supply voltage |
1.08 V |
1.08 V |
1.08 V |
1.08 V |
| Nominal supply voltage |
1.2 V |
1.2 V |
1.2 V |
1.2 V |
| surface mount |
YES |
YES |
YES |
YES |
| technology |
CMOS |
CMOS |
CMOS |
CMOS |
| Temperature level |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
| Terminal surface |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form |
BALL |
BALL |
BALL |
BALL |
| Terminal pitch |
0.65 mm |
0.65 mm |
0.65 mm |
0.65 mm |
| Terminal location |
BOTTOM |
BOTTOM |
BOTTOM |
BOTTOM |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
| width |
9 mm |
9 mm |
9 mm |
9 mm |
| uPs/uCs/peripheral integrated circuit type |
MICROCONTROLLER, RISC |
MICROCONTROLLER, RISC |
MICROCONTROLLER, RISC |
MICROCONTROLLER, RISC |