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K9F5616U0C-PIB0

Description
32M X 8 FLASH 1.8V PROM, 30 ns, PBGA63
Categorystorage    storage   
File Size650KB,39 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K9F5616U0C-PIB0 Overview

32M X 8 FLASH 1.8V PROM, 30 ns, PBGA63

K9F5616U0C-PIB0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionTSSOP, TSSOP48,.8,20
Reach Compliance Codecompli
Maximum access time30 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
memory density268435456 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of departments/size2K
Number of terminals48
word count16777216 words
character code16000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size256 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
ready/busyYES
Department size8K
Maximum standby current0.00005 A
Maximum slew rate0.025 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNAND TYPE
Base Number Matches1
ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification
.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
Specification
Relaxed Condition
tWC
45
80
tWH
15
20
tWP
25
60
tRC
50
80
tREH
15
20
tRP
25
60
UNIT : ns
tREA
30
60
tCEA
45
75
Sincerely,
chwoosun@sec.samsung.com
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
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