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2N3870

Description
Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size225KB,4 Pages
ManufacturerSemitronics Corp.
Related ProductsFound9parts with similar functions to 2N3870
Download Datasheet Parametric View All

2N3870 Overview

Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element

2N3870 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Nominal circuit commutation break time40 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current40 mA
Maximum DC gate trigger voltage1.6 V
JESD-30 codeO-MUPF-D2
Maximum leakage current2 mA
On-state non-repetitive peak current350 A
Number of components1
Number of terminals2
Maximum on-state current11000 A
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPRESS FIT
Certification statusNot Qualified
Maximum rms on-state current35 A
Off-state repetitive peak voltage100 V
Repeated peak reverse voltage100 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1

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