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CY62256VNLL-70SNXE

Description
32KX8 STANDARD SRAM, 70ns, PDSO28, 0.300 INCH, LEAD FREE, SOIC-28
Categorystorage    storage   
File Size1MB，16 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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CY62256VNLL-70SNXE Overview

32KX8 STANDARD SRAM, 70ns, PDSO28, 0.300 INCH, LEAD FREE, SOIC-28

CY62256VNLL-70SNXE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeSOIC
package instruction0.300 INCH, LEAD FREE, SOIC-28
Contacts28
Reach Compliance Codeunknown
Maximum access time70 ns
JESD-30 codeR-PDSO-G28
JESD-609 codee4
length17.9324 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusCOMMERCIAL
Maximum seat height2.794 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width7.5057 mm

CY62256VNLL-70SNXE Preview

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CY62256VN
256 K (32 K × 8) Static RAM
256K (32K × 8) Static RAM
Features
■
Functional Description
The CY62256VN family is composed of two high performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and tristate drivers.
These devices have an automatic power-down feature, reducing
the power consumption by over 99% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location addressed
by the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE)
is HIGH.
Temperature ranges
❐
Commercial: 0 °C to +70 °C
❐
Industrial: –40 °C to +85 °C
❐
Automotive-A: –40 °C to +85 °C
❐
Automotive-E: –40 °C to +125 °C
Speed: 70 ns
Low voltage range: 2.7 V to 3.6 V
Low active power and standby power
Easy memory expansion with CE and OE features
TTL compatible inputs and outputs
Automatic power-down when deselected
CMOS for optimum speed and power
Available in standard Pb-free and non Pb-free 28-pin (300-mil)
narrow SOIC, 28-pin TSOP-I, and 28-pin reverse TSOP-I
packages
■
■
■
■
■
■
■
■
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K x 8
Y
ARRA
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
.
Cypress Semiconductor Corporation
Document Number: 001-06512 Rev. *E
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 27, 2011
CY62256VN
Contents
Product Portfolio .............................................................. 3
Pin Configurations ........................................................... 3
Pin Definitions .................................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
Data Retention Characteristics ....................................... 5
Switching Characteristics ................................................ 6
Typical DC and AC Characteristics ................................ 9
Truth Table ...................................................................... 10
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Reference Information ................................................... 13
Acronyms .................................................................. 13
Document Conventions ............................................. 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 15
Worldwide Sales and Design Support ....................... 15
Products .................................................................... 15
PSoC Solutions ......................................................... 15
Document Number: 001-06512 Rev. *E
Page 2 of 15
CY62256VN
Product Portfolio
Product
CY62256VNLL
CY62256VNLL
CY62256VNLL
CY62256VNLL
Range
Min
Commercial
Industrial
Automotive-A
Automotive-E
2.7
2.7
2.7
2.7
V
CC
Range (V)
Typ
[1]
Power Dissipation
Operating, I
CC
(mA)
Max
3.6
3.6
3.6
3.6
Typ
[1]
Standby, I
SB2
(μA)
Typ
[1]
0.1
0.1
0.1
0.1
Max
5
10
10
130
Max
30
30
30
30
3.0
3.0
3.0
3.0
11
11
11
11
Pin Configurations
Narrow SOIC
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
TSOP I
Top View
(not to scale)
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
V
CC
WE
A
4
A
3
A
2
A
1
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
10
11
12
13
14
15
16
17
18
19
20
21
TSOP I
Reverse Pinout
Top View
(not to scale)
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
Pin Definitions
Pin Number
1–10, 21, 23–26 Input
11–13, 15–19
27
20
22
14
28
Input/Output
Input/Control
Input/Control
Input/Control
Ground
Power Supply
Type
A
0
–A
14
. Address inputs
I/O
0
–I/O
7
. Data lines. Used as input or output lines depending on operation.
WE.
When selected LOW, a WRITE is conducted. When selected HIGH, a READ is conducted.
CE.
When LOW, selects the chip. When HIGH, deselects the chip
OE.
Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins
GND.
Ground for the device
V
CC
. Power supply for the device
Description
Note
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
Typ, T
A
= 25 °C, and t
AA
= 70 ns.
Document Number: 001-06512 Rev. *E
Page 3 of 15
CY62256VN
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential
(pin 28 to pin 14)...........................................–0.5 V to +4.6 V
DC voltage applied to outputs
in high Z State
[2]
.................................. –0.5 V to V
CC
+ 0.5 V
DC input
voltage
[2]
............................... –0.5 V to V
CC
+ 0.5 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
(T
A
)
[3]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
V
CC
2.7 V to 3.6 V
CY62256VN Commercial
Industrial
Automotive-A
Automotive-E –40
°
C to +125
°
C
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
GND
≤
V
IN
≤
V
CC
Commercial/
Industrial/
Automotive-A
Automotive-E
I
OZ
Output leakage current
GND
≤
V
IN
≤
V
CC
, Output
Disabled
Commercial/
Industrial/
Automotive-A
Automotive-E
I
CC
I
SB1
V
CC
operating supply
current
V
CC
= 3.6 V, I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
All ranges
I
OH
=
−1.0
mA
I
OL
= 2.1 mA
Test Conditions
V
CC
= 2.7 V
V
CC
= 2.7 V
–70
Min
2.4
–
2.2
–0.5
–1
Typ
[4]
–
–
–
–
–
Max
–
0.4
V
CC
+ 0.3V
0.8
+1
Unit
V
V
V
V
μA
–10
–1
–
–
+10
+1
μA
μA
–10
–
–
–
11
100
+10
30
300
μA
mA
μA
V
CC
= 3.6 V, CE
≥
V
IH
,
Automatic CE
All ranges
power-down current - TTL V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
inputs
Automatic CE
power-down current -
CMOS inputs
V
CC
= 3.6 V, CE
≥
V
CC
– 0.3 V, Commercial
V
IN
≥
V
CC
– 0.3 V or V
IN
≤
0.3 V,
Industrial/
f=0
Automotive-A
Automotive-E
I
SB2
–
–
–
0.1
5
10
130
μA
Notes
2. V
IL
(min) = –2.0 V for pulse durations of less than 20 ns.
3. T
A
is the “Instant-On” case temperature.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
Typ, T
A
= 25 °C, and t
AA
= 70 ns.
Document Number: 001-06512 Rev. *E
Page 4 of 15
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CY62256VNLL-70SNXE Related Products

CY62256VNLL-70SNXE CY62256VNLL-70SNXI CY62256VNLL-70ZXI CY62256VNLL-70ZXC CY62256VNLL-70ZRXI CY62256VNLL-70ZXE
Description 32KX8 STANDARD SRAM, 70ns, PDSO28, 0.300 INCH, LEAD FREE, SOIC-28 32KX8 STANDARD SRAM, 70ns, PDSO28, 0.300 INCH, LEAD FREE, SOIC-28 32KX8 STANDARD SRAM, 70ns, PDSO28, 8 X 13.40 MM, LEAD FREE, TSOP1-28 32KX8 STANDARD SRAM, 70ns, PDSO28, 8 X 13.40 MM, LEAD FREE, TSOP1-28 32KX8 STANDARD SRAM, 70ns, PDSO28, 8 X 13.40 MM, LEAD FREE, REVERSE, TSOP1-28 32KX8 STANDARD SRAM, 70ns, PDSO28, 8 X 13.40 MM, LEAD FREE, TSOP1-28
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
Parts packaging code SOIC SOIC TSOP TSOP TSOP TSOP
package instruction 0.300 INCH, LEAD FREE, SOIC-28 0.300 INCH, LEAD FREE, SOIC-28 8 X 13.40 MM, LEAD FREE, TSOP1-28 8 X 13.40 MM, LEAD FREE, TSOP1-28 8 X 13.40 MM, LEAD FREE, REVERSE, TSOP1-28 8 X 13.40 MM, LEAD FREE, TSOP1-28
Contacts 28 28 28 28 28 28
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum access time 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns
JESD-30 code R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
JESD-609 code e4 e4 e3 e3 e3 e3
length 17.9324 mm 17.9324 mm 11.8 mm 11.8 mm 11.8 mm 11.8 mm
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8
Humidity sensitivity level 3 3 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Number of functions 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 85 °C 85 °C 70 °C 85 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C -40 °C
organize 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP TSOP1 TSOP1 TSOP1-R TSOP1
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Maximum seat height 2.794 mm 2.794 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level AUTOMOTIVE INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL AUTOMOTIVE
Terminal surface NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 0.55 mm 0.55 mm 0.55 mm 0.55 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 20 20 20 20 20 20
width 7.5057 mm 7.5057 mm 8 mm 8 mm 8 mm 8 mm

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Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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