BSP206TRL datasheet, PDF - EEWORLD Datasheet

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BSP206TRL: DescriptionTRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSP206TRL Overview

TRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BSP206TRL Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

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BSP206TRL Related Products

	BSP206TRL	BSP206TRL13	BSP205TRL	BSP205TRL13
Description	TRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 0.25 A, 50 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 0.25 A, 50 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker	NXP	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	50 V	50 V
Maximum drain current (ID)	0.3 A	0.3 A	0.25 A	0.25 A
Maximum drain-source on-resistance	6 Ω	6 Ω	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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