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TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
D
Trimmed Offset Voltage:
D
D
D
D
D
D
D
D
NC
1IN –
NC
1IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
1OUT
NC
VDD
NC
NC
2OUT
NC
2IN –
NC
NC – No internal connection
D
D
TLC277 . . . 500
µV
Max at 25°C,
V
DD
= 5 V
Input Offset Voltage Drift . . . Typically
0.1
µV/Month,
Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C . . . 3 V to 16 V
– 40°C to 85°C . . . 4 V to 16 V
– 55°C to 125°C . . . 4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix types)
Low Noise . . . Typically 25 nV/√Hz at
f = 1 kHz
Output Voltage Range Includes Negative
Rail
High Input impedance . . . 10
12
Ω
Typ
ESD-Protection Circuitry
Small-Outline Package Option Also
Available in Tape and Reel
Designed-In Latch-Up Immunity
D, JG, P, OR PW PACKAGE
(TOP VIEW)
1OUT
1IN –
1IN +
GND
1
2
3
4
8
7
6
5
V
DD
2OUT
2IN –
2IN +
FK PACKAGE
(TOP VIEW)
description
The TLC272 and TLC277 precision dual
operational amplifiers combine a wide range of
input offset voltage grades with low offset voltage
drift, high input impedance, low noise, and speeds
approaching those of general-purpose BiFET
devices.
Percentage of Units – %
DISTRIBUTION OF TLC277
INPUT OFFSET VOLTAGE
30
473 Units Tested From 2 Wafer Lots
VDD = 5 V
TA = 25°C
P Package
25
These devices use Texas Instruments silicon-
gate LinCMOS technology, which provides
offset voltage stability far exceeding the stability
available with conventional metal-gate pro-
cesses.
The extremely high input impedance, low bias
currents, and high slew rates make these cost-
effective devices ideal for applications previously
reserved for BiFET and NFET products. Four
offset voltage grades are available (C-suffix and
I-suffix types), ranging from the low-cost TLC272
(10 mV) to the high-precision TLC277 (500
µV).
These advantages, in combination with good
common-mode rejection and supply voltage
rejection, make these devices a good choice for
new state-of-the-art designs as well as for
upgrading existing designs.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
20
15
10
5
0
– 800
– 400
0
400
VIO – Input Offset Voltage –
µV
NC
GND
NC
2IN +
NC
800
Copyright
2002, Texas Instruments Incorporated
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
1
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
description (continued)
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
500
µV
2 mV
5 mV
10mV
500
µV
2 mV
5 mV
10 mV
SMALL
OUTLINE
(D)
TLC277CD
TLC272BCD
TLC272ACD
TLC272CD
TLC277ID
TLC272BID
TLC272AID
TLC272ID
CHIP
CARRIER
(FK)
—
—
—
—
—
—
—
—
CERAMIC
DIP
(JG)
—
—
—
—
—
—
—
—
PLASTIC
DIP
(P)
TLC277CP
TLC272BCP
TLC272ACP
TLC272CP
TLC277IP
TLC272BIP
TLC272AIP
TLC272IP
TSSOP
(PW)
—
—
—
TLC272CPW
—
—
—
—
CHIP
FORM
(Y)
—
—
—
TLC272Y
—
—
—
—
0°C to 70°c
– 40°C to 85°C
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
2
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
equivalent schematic (each amplifier)
VDD
P3
P4
R6
R1
IN –
P1
IN +
R2
N5
P5
P6
P2
R5
C1
OUT
N3
N1
R3
N2
D1
R4
D2
N6
R7
N7
N4
GND
TLC272Y chip information
This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
VDD
(8)
+
–
+
–
60
(4)
GND
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4
×
4 MINIMUM
TJmax = 150°C
TOLERANCES ARE
±
10%.
ALL DIMENSIONS ARE IN MILS.
73
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
(5)
(6)
2IN +
2IN –
(1)
1OUT
1IN +
1IN –
2OUT
(3)
(2)
(7)
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
3
TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Differential input voltage, V
ID
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
V
DD
Input voltage range, V
I
(any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to V
DD
Input current, I
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
5 mA
output current, I
O
(each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
30 mA
Total current into V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, T
A
: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN –.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
D
FK
JG
P
PW
TA
≤
25°C
POWER RATING
725 mW
1375 mW
1050 mW
1000 mW
525 mW
DERATING FACTOR
ABOVE TA = 25°C
5.8 mW/°C
11 mW/°C
8.4 mW/°C
8.0 mW/°C
4.2 mW/°C
TA = 70°C
POWER RATING
464 mW
880 mW
672 mW
640 mW
336 mW
TA = 85°C
POWER RATING
377 mW
715 mW
546 mW
520 mW
N/A
TA = 125°C
POWER RATING
N/A
275 mW
210 mW
N/A
N/A
recommended operating conditions
C SUFFIX
MIN
Supply voltage, VDD
Common-mode
Common mode input voltage VIC
voltage,
Operating free-air temperature, TA
VDD = 5 V
VDD = 10 V
3
– 0.2
– 0.2
0
MAX
16
3.5
8.5
70
I SUFFIX
MIN
4
– 0.2
– 0.2
– 40
MAX
16
3.5
8.5
85
M SUFFIX
MIN
4
0
0
– 55
MAX
16
3.5
8.5
125
V
°C
UNIT
V
4
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
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