DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA810TC
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The
µ
PA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
to the UHF band.
FEATURES
• Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High gain: |S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Flat-lead 6-pin thin-type ultra super minimold
• Built-in 2 transistors (2
×
2SC5006)
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
µ
PA810TC
µ
PA810TC-T1
Taping products
(3 kp/reel)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA810TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Ratings
20
12
3
100
200 in 1 element
230 in 2 elements
150
–65 to +150
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. P14550EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA810TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
230
200
2 Elements in total
Free Air
Collector Current I
C
(mA)
COLLECTOR CURRENT vs. BASE TO
EMITTER VOLTAGE
20
V
CE
= 3 V
Total Power Dissipation P
T
(mW)
Per
Element
10
100
0
0
50
100
150
0
0
0.5
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
1 000
V
CE
= 3 V
Collector Current I
C
(mA)
20
I
B
= 160
µ
A
15
I
B
= 140
µ
A
I
B
= 120
µ
A
10
I
B
= 100
µ
A
I
B
= 80
µ
A
5
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
6.00
14.00
Insertion Power Gain
S
21e
2
(dB)
DC Current Gain h
FE
100
0
10
0.1
1
10
100
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
Gain Bandwidth Product f
T
(GHz)
5.00
4.00
3.00
2.00
1.00
0.00
V
CE
= 3 V
f = 1 GHz
12.00
10.00
8.00
6.00
4.00
2.00
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Data Sheet P14550EJ1V0DS00
3
µ
PA810TC
NOISE FIGURE vs. COLLECTOR CURRENT
6.00
5.00
Noise Figure NF (dB)
Insertion Power Gain
S
21e
2
(dB)
INSERTION POWER GAIN vs. FREQUENCY
25.0
V
CE
= 3 V
I
C
= 7 mA
20.0
V
CE
= 3 V
f = 1 GHz
4.00
3.00
2.00
1.00
0.00
15.0
10.0
5.0
1
10
Collector Current I
C
(mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
100
0.0
0.1
1.0
Frequency f (GHz)
10.0
0.900
Feedback Capacitance C
re
(pF)
0.800
0.700
0.600
0.500
0.400
0.300
0.200
0.100
0.000
1
10
f = 1 MHz
100
Collector to Base Voltage V
CB
(V)
4
Data Sheet P14550EJ1V0DS00
RF/Wirelessly
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