MCR100-3RL datasheet, PDF - EEWORLD Datasheet

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MCR100-3RL: DescriptionSilicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size69KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCR100-3RL Overview

Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN

MCR100-3RL Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	SENSITIVE GATE
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	100 V
Repeated peak reverse voltage	100 V
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Trigger device type	SCR

MCR100-3RL Preview

MCR100 Series

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO-226AA package which is

readily adaptable for use in automatic insertion equipment.

•

Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

•

Blocking Voltage to 600 Volts

•

On–State Current Rating of 0.8 Amperes RMS at 80°C

•

High Surge Current Capability — 10 Amperes

•

Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

•

Immunity to dV/dt — 20 V/µsec Minimum at 110°C

•

Glass-Passivated Surface for Reliability and Uniformity

•

Device Marking: Device Type, e.g., MCR100–3, Date Code

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Peak Repetitive Off–State Voltage(1)

(TJ = 40 to 110°C, Sine Wave, 50 to

60 Hz; Gate Open)

MCR100–3

MCR100–4

MCR100–6

MCR100–8

Symbol

VDRM,

VRRM

Value

Unit

Volts

100

200

400

600

0.8

Amp

Amps

Preferred Device

http://onsemi.com

SCRs

0.8 AMPERES RMS

100 thru 600 VOLTS

On-State RMS Current

(TC = 80°C) 180° Conduction Angles

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

TJ = 25°C)

Circuit Fusing Consideration (t = 8.3 ms)

Forward Peak Gate Power

(TA = 25°C, Pulse Width

IT(RMS)

ITSM

TO–92 (TO–226AA)

CASE 029

STYLE 10

PIN ASSIGNMENT

I2t

PGM

PG(AV)

IGM

VGRM

Tstg

0.415

0.1

0.10

1.0

5.0

–40 to

110

–40 to

150

A2s

Watt

Amp

Volts

°C

Cathode

Gate

Anode

1.0

Forward Average Gate Power

(TA = 25°C, t = 8.3 ms)

Forward Peak Gate Current

(TA = 25°C, Pulse Width

1.0

Reverse Peak Gate Voltage

(TA = 25°C, Pulse Width

1.0

Operating Junction Temperature Range

@ Rate VRRM and VDRM

Storage Temperature Range

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 571 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 2000

566

May, 2000 – Rev. 4

Publication Order Number:

MCR100/D

MCR100 Series

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance — Junction to Case

— Junction to Ambient

Lead Solder Temperature

( 1/16″ from case, 10 secs max)

Symbol

θJC

θJA

Max

200

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current(1)

(VD = Rated VDRM and VRRM; RGK = 1 kΩ)

TC = 25°C

TC = 110°C

IDRM, IRRM

—

100

µA

ON CHARACTERISTICS

Peak Forward On–State Voltage(*)

(ITM = 1.0 Amp Peak @ TA = 25°C)

Gate Trigger Current (Continuous dc)(2)

(VAK = 7.0 Vdc, RL = 100 Ohms)

Holding Current (2)

(VAK = 7.0 Vdc, Initiating Current = 20 mA)

Latch Current

(VAK = 7.0 V, Ig = 200

µA)

Gate Trigger Voltage (Continuous dc)(2)

(VAK = 7.0 Vdc, RL = 100 Ohms) TC = –40°C

VTM

TC = 25°C

TC = –40°C

TC = 25°C

TC = –40°C

TC = 25°C

IGT

VGT

—

0.5

—

0.6

—

0.62

—

1.7

200

5.0

0.8

1.2

Volts

µA

Volts

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

Critical Rate of Rise of On–State Current

(IPK = 20 A; Pw = 10

µsec;

diG/dt = 1 A/µsec, Igt = 20 mA)

*Indicates Pulse Test: Pulse Width

≤

1.0 ms, Duty Cycle

≤

1%.

(1) RGK = 1000 Ohms included in measurement.

(2) Does not include RGK in measurement.

dV/dt

—

V/µs

di/dt

—

A/µs

http://onsemi.com

567

MCR100 Series

Voltage Current Characteristic of SCR

+ Current

Anode +

VTM

on state

IRRM at VRRM

Symbol

VDRM

IDRM

VRRM

IRRM

VTM

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak on State Voltage

Holding Current

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode –

+ Voltage

IDRM at VDRM

Forward Blocking Region

(off state)

100

GATE TRIGGER VOLTAGE (VOLTS)

GATE TRIGGER CURRENT (

–40 –25 –10

20 35 50 65 80

TJ, JUNCTION TEMPERATURE (°C)

110

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

–40 –25 –10

20 35 50

65 80

TJ, JUNCTION TEMPERATURE (°C)

110

Figure 1. Typical Gate Trigger Current versus

Junction Temperature

Figure 2. Typical Gate Trigger Voltage versus

Junction Temperature

http://onsemi.com

568

MCR100 Series

1000

100

LATCHING CURRENT (

110

HOLDING CURRENT (

100

–40 –25 –10

20 35 50 65 80

TJ, JUNCTION TEMPERATURE (°C)

–40 –25 –10

20 35 50 65 80

TJ, JUNCTION TEMPERATURE (°C)

110

Figure 3. Typical Holding Current versus

Junction Temperature

Figure 4. Typical Latching Current versus

Junction Temperature

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (

I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)

120

110

100

0.1

30°

60°

90°

120°

0.5

180°

MAXIMUM @ TJ = 25°C

MAXIMUM @ TJ = 110°C

0.2

0.3

0.4

IT(RMS), RMS ON-STATE CURRENT (AMPS)

0.1

0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Typical RMS Current Derating

Figure 6. Typical On–State Characteristics

http://onsemi.com

569

MCR100 Series

TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A

H2B

H4 H5

W1 W

Figure 7. Device Positioning on Tape

Specification

Inches

Symbol

F1, F2

H2A

H2B

Millimeter

Max

Min

3.8

0.38

2.4

1.5

8.5

15.5

8.5

2.5

12.5

5.95

3.55

0.15

—

0.35

17.5

5.5

.15

Item

Tape Feedhole Diameter

Component Lead Thickness Dimension

Component Lead Pitch

Bottom of Component to Seating Plane

Feedhole Location

Deflection Left or Right

Deflection Front or Rear

Feedhole to Bottom of Component

Feedhole to Seating Plane

Defective Unit Clipped Dimension

Lead Wire Enclosure

Feedhole Pitch

Feedhole Center to Center Lead

First Lead Spacing Dimension

Adhesive Tape Thickness

Overall Taped Package Thickness

Carrier Strip Thickness

Carrier Strip Width

Adhesive Tape Width

Adhesive Tape Position

Min

0.1496

0.015

0.0945

.059

0.3346

0.7086

0.610

0.3346

0.09842

0.4921

0.2342

0.1397

0.06

—

0.014

0.6889

0.2165

.0059

Max

4.2

0.51

2.8

4.0

9.5

1.0

19.5

16.5

—

12.9

6.75

3.95

0.20

1.44

0.65

6.3

0.5

0.1653

0.020

0.110

.156

0.3741

0.039

0.051

0.768

0.649

0.433

—

0.5079

0.2658

0.1556

0.08

0.0567

0.027

0.7481

0.2841

0.01968

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

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570

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MCR100-3RL Related Products

	MCR100-3RL	MCR100-6RLRA	MCR100-6RLRM	MCR100-6RL	MCR100-6ZL1	MCR100-8RL
Description	Silicon Controlled Rectifier, 0.8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN	Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN	Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN	0.8A, 400V, SCR, TO-92, TO-226AA, 3 PIN	Silicon Controlled Rectifier, 0.8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, TO-226AA, 3 PIN	0.8A, 600V, SCR, TO-92, TO-226AA, 3 PIN
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE	SENSITIVE GATE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA	0.2 mA
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Off-state repetitive peak voltage	100 V	400 V	400 V	400 V	400 V	600 V
Repeated peak reverse voltage	100 V	400 V	400 V	400 V	400 V	600 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR

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