MBR25100CTC0G datasheet, PDF - EEWORLD Datasheet

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MBR25100CTC0G: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-220AB,; CategoryDiscrete semiconductor diode; File Size203KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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MBR25100CTC0G Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-220AB,

MBR25100CTC0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.92 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	12.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	100 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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MBR2535CT thru MBR25150CT

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Dual Common Cathode Schottky Rectifier

TO-220AB

MECHANICAL DATA

Case:

TO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.9 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

MBR

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak repetitive forward current

(Rated VR, square wave, 20KHz)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

=12.5A, T

=25℃

=12.5A, T

=125℃

=25A, T

=25℃

=25A, T

=125℃

Maximum reverse current @ rated VR

Voltage rate of change (Rated V

)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0

μs,

1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

=25

℃

=125

℃

SYMBOL

RRM

RMS

F(AV)

FRM

FSM

RRM

0.82

0.73

dV/dt

θJC

STG

0.2

0.75

0.65

0.2

10000

1.0

- 55 to +150

2535

MBR

2545

MBR

2550

MBR

2560

200

0.5

0.85

0.75

0.92

0.88

0.1

7.5

0.95

0.92

1.02

0.98

0.1

V/μs

MBR

2590

MBR

100

MBR

UNIT

150

105

150

25100 25150

C/W

Document Number: DS_D1308065

Version: I13

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