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MBR25100CTC0G

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size203KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

MBR25100CTC0G Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 100V V(RRM), Silicon, TO-220AB,

MBR25100CTC0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current12.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBR
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=12.5A, T
J
=25℃
I
F
=12.5A, T
J
=125℃
I
F
=25A, T
J
=25℃
I
F
=25A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1
-
V
F
-
0.82
0.73
I
R
dV/dt
R
θJC
T
J
T
STG
0.2
15
0.75
0.65
-
-
0.2
10
10000
1.0
- 55 to +150
- 55 to +150
2535
CT
35
24
35
MBR
2545
CT
45
31
45
MBR
2550
CT
50
35
50
MBR
2560
CT
60
42
60
25
25
200
0.5
0.85
0.75
0.92
0.88
0.1
7.5
0.95
0.92
1.02
0.98
0.1
5
mA
V/μs
O
MBR
2590
CT
90
63
90
MBR
CT
100
70
100
MBR
UNIT
V
V
V
A
A
A
A
CT
150
105
150
25100 25150
V
C/W
O
O
C
C
Document Number: DS_D1308065
Version: I13
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