GSIB4A20 thru GSIB4A80
New Product
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-In-Line
Bridge Rectifier
Features
Case Style GSIB-3G
0.118 x 45 Chamfer
0.996 (25.3)
0.972 (24.7)
0.492
(12.5)
0.150 (3.8)
0.134 (3.4)
Detail Z
enlarged
Reverse Voltage
200 and 800 V
Forward Current
4.0 A
0.134 (3.4)
0.122 (3.1)
Dia.
0.602 (15.3)
0.579 (14.7)
0.157 (4.0)
0.057(1.45)
0.041(1.05)
0.709 (18.0)
0.669 (17.0)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 V
RMS
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
+
0.059
(1.50)
0.382 (9.7)
0.366 (9.3)
Z
Mechanical Data
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mounting Position:
Any
(3)
Mounting Torque:
5 in-lbs max.
Weight:
0.15oz., 4.0g
Packaging codes-options:
1-400 ea. per Bulk Tray Stack
0.146 (3.7)
0.130 (3.3)
0.709 (18.0)
0.669 (17.0)
0.078 (1.98)
0.062 (1.58)
0.042 (1.07)
0.038 (0.96)
Dia.
0.012
(0.30)
0.189 (4.8)
0.173 (4.4)
0.303 (7.7)
(3x)
0.287 (7.3)
0.126 (3.2)
0.110 (2.8)
Dimensions in inches and (millimeters)
Use suffix "N" for no stand-off
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified output current at
T
C
= 100
O
C
(1)
T
A
= 25
O
C
(2)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
R
θJA
R
θJC
T
J,
T
STG
GSIB4A20
200
140
200
Ratings at 25°C ambient temperature unless otherwise specified.
GSIB4A40
400
280
400
GSIB4A60 GSIB4A80
600
420
600
800
560
800
Unit
V
V
V
A
A
A
2
sec
°C/W
°C
4.0
(1)
2.3
(2)
80
32
26
(2)
5
(1)
–55 to +150
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
Typical thermal resistance per leg
Operating junction storage and temperature range
Electrical Characteristics
Parameter
Maximum instantaneous forward voltage
drop per leg at 2.0 A
Maximum DC reverse current at rated
DC blocking voltage per leg
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
F
I
R
GSIB4A20
GSIB4A40
GSIB4A60 GSIB4A80
Unit
V
µA
1.00
5.0
400
T
A
= 25°C
T
A
= 125°C
Notes:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Document Number 88858
21-Oct-03
www.vishay.com
1
GSIB4A20 thru GSIB4A80
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 - Derating Cuve Output Rectified Current
4
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Leg
100
Average Forward Output Current (A)
Peak Forward Surge Current (A)
Heatsink Mounting, T
C
3
80
60
2
P.C.B. Mounting, T
A
1
40
20
1.0 Cycle
0
1
100
0
0
25
50
75
100
125
150
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Forward Characteristics
Per Leg
100
Fig. 4 - Typical Reverse Characteristics
Per Leg
Instantaneous Reverse Current (µA)
100
Instantaneous Forward Current (A)
10
1
0.10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.01
20
30
40
50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Per Leg
Transient Thermal Impedance (°C/W)
1000
100
Fig. 6 - Typical Transient Thermal
Impedance Per Leg
Junction Capacitance (pF)
100
10
10
1
1
0
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t, Heating Time (sec.)
Document Number 88858
21-Oct-03
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