IS61C64AH-20U datasheet, PDF - EEWORLD Datasheet

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IS61C64AH-20U: DescriptionStandard SRAM, 8KX8, 20ns, CMOS, PDSO28,; Categorystorage storage; File Size430KB，8 Pages; ManufacturerIntegrated Circuit Solution Inc.

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IS61C64AH-20U Overview

Standard SRAM, 8KX8, 20ns, CMOS, PDSO28,

IS61C64AH-20U Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Integrated Circuit Solution Inc.
package instruction	SOP, SOP28,.45
Reach Compliance Code	unknown
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP28,.45
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.006 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL

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IS61C64AH

8K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time: 15, 20, 25 ns

• Automatic power-down when chip is

deselected

• CMOS low power operation

— 450 mW (typical) operating

— 250 µW (typical) standby

• TTL compatible interface levels

• Single 5V power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Two Chip Enables (CE1 and CE2) for

simple memory expansion

DESCRIPTION

The

ICSI

IS61C64AH is a very high-speed, low power,

8192-word by 8-bit static RAM. It is fabricated using

ICSI

high-performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques, yields

access times as fast as 15 ns with low power consumption.

When

CE1

is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation can

be reduced down to 250 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using two Chip Enable

inputs,

CE1

and CE2. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS61C64AH is packaged in the JEDEC standard 28-pin,

300mil SOJ and 330mil SOP.

FUNCTIONAL BLOCK DIAGRAM

A0-A12

DECODER

256 X 256

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CE2

CE1

CONTROL

CIRCUIT

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

Integrated Circuit Solution Inc.

SR001-B

IS61C64AH-20U Related Products

	IS61C64AH-20U	IS61C64AH-25U	IS61C64AH-20J	IS61C64AH-25J	IS61C64AH-15U	IS61C64AH-15J
Description	Standard SRAM, 8KX8, 20ns, CMOS, PDSO28,	Standard SRAM, 8KX8, 25ns, CMOS, PDSO28,	Standard SRAM, 8KX8, 20ns, CMOS, PDSO28,	Standard SRAM, 8KX8, 25ns, CMOS, PDSO28,	Standard SRAM, 8KX8, 15ns, CMOS, PDSO28,	Standard SRAM, 8KX8, 15ns, CMOS, PDSO28,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Integrated Circuit Solution Inc.	Integrated Circuit Solution Inc.	Integrated Circuit Solution Inc.	Integrated Circuit Solution Inc.	Integrated Circuit Solution Inc.	Integrated Circuit Solution Inc.
package instruction	SOP, SOP28,.45	SOP, SOP28,.45	SOJ, SOJ28,.34	SOJ, SOJ28,.34	SOP, SOP28,.45	SOJ, SOJ28,.34
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	20 ns	25 ns	20 ns	25 ns	15 ns	15 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G28	R-PDSO-G28	R-PDSO-J28	R-PDSO-J28	R-PDSO-G28	R-PDSO-J28
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Number of terminals	28	28	28	28	28	28
word count	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	SOP	SOJ	SOJ	SOP	SOJ
Encapsulate equivalent code	SOP28,.45	SOP28,.45	SOJ28,.34	SOJ28,.34	SOP28,.45	SOJ28,.34
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.12 mA	0.11 mA	0.12 mA	0.11 mA	0.135 mA	0.135 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	J BEND	J BEND	GULL WING	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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