SCM6323ATS10AR datasheet, PDF - EEWORLD Datasheet

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SCM6323ATS10AR: DescriptionIC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC; Categorystorage storage; File Size301KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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SCM6323ATS10AR Overview

IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC

SCM6323ATS10AR Parametric

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	unknown
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of terminals	44
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Minimum standby current	3 V
Maximum slew rate	0.15 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

SCM6323ATS10AR Preview

MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MCM6323A/D

Product Preview

MCM6323A

64K x 16 Bit 3.3 V Asynchronous

Fast Static RAM

The MCM6323A is a 1,048,576 bit static random access memory organized

as 65,536 words of 16 bits. Static design eliminates the need for external clocks

or timing strobes; CMOS circuitry reduces power consumption and provides for

greater reliability.

The MCM6323A is equipped with chip enable (E), write enable (W), and output

enable (G) pins, allowing for greater system flexibility and eliminating bus con-

tention problems. Separate byte enable controls (LB and UB) allow individual

bytes to be written and read. LB controls the 8 DQa bits, while UB controls the

8 DQb bits.

The MCM6323A is available in a 400 mil small–outline J–leaded (SOJ) pack-

age and a 44–lead TSOP Type II package in copper leadframe for optimum

printed circuit board (PCB) reliability.

•

Single 3.3 V

0.3 V Power Supply

Fast Access Time: 10, 12, 15 ns

Equal Address and Chip Enable Access Time

All Inputs and Outputs are TTL Compatible

Data Byte Control

Fully Static Operation

Power Operation: 140/135/130 mA Maximum, Active AC

Industrial Temperature Option: – 40 to + 85°C

Part Number: SCM6323AYJ10A

BLOCK DIAGRAM

OUTPUT

ENABLE

BUFFER

ADDRESS

BUFFERS

ROW

COLUMN

DECODER DECODER

HIGH BYTE OUTPUT ENABLE

LOW BYTE OUTPUT ENABLE

HIGH

BYTE

OUTPUT

BUFFER

HIGH

BYTE

WRITE

DRIVER

8 DQb

YJ PACKAGE

400 MIL SOJ

CASE 919–01

TS PACKAGE

44–LEAD

TSOP TYPE II

CASE 924A–02

Freescale Semiconductor, Inc...

PIN ASSIGNMENT

DQa

VDD

VSS

DQa

DQb

VSS

VDD

DQb

CHIP

ENABLE

BUFFER

64K x 16

BIT

MEMORY

ARRAY

SENSE

AMPS

WRITE

ENABLE

BUFFER

LOW

BYTE

OUTPUT

BUFFER

LOW

BYTE

WRITE

DRIVER

8 DQa

PIN NAMES

A . . . . . . . . . . . . . . . . . . . . . . . . Address Input

E . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable

W . . . . . . . . . . . . . . . . . . . . . . . . Write Enable

G . . . . . . . . . . . . . . . . . . . . . . Output Enable

UB . . . . . . . . . . . . . . . . . . . . . . . . Upper Byte

LB . . . . . . . . . . . . . . . . . . . . . . . . . Lower Byte

DQa . . . . . . . . . . . . Lower Data Input/Output

DQb . . . . . . . . . . . . Upper Data Input/Output

VDD . . . . . . . . . . . . . . + 3.3 V Power Supply

VSS . . . . . . . . . . . . . . . . . . . . . . . . . . Ground

NC . . . . . . . . . . . . . . . . . . . . . No Connection

BYTE

ENABLE

BUFFER

HIGH BYTE WRITE ENABLE

LOW BYTE WRITE ENABLE

This document contains information on a new product under development. Motorola reserves the right

to change or discontinue this product without notice.

REV 5

11/4/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM6323A

Freescale Semiconductor, Inc.

TRUTH TABLE

(X = Don’t Care)

Mode

Not Selected

Output Disabled

Low Byte Read

High Byte Read

Word Read

Low Byte Write

High Byte Write

Word Write

VDD Current

ISB1, ISB2

IDDA

DQa

High–Z

Dout

High–Z

Dout

Din

High–Z

Din

DQb

High–Z

Dout

High–Z

Din

ABSOLUTE MAXIMUM RATINGS

(See Notes)

Rating

Symbol

VDD

Vin

Iout

Commerial

Industrial

Commerial

Industrial

Tbias

Tstg

Value

– 0.5 to + 4.6

– 0.5 to VDD + 0.5

0.75

– 10 to + 85

– 45 to + 90

0 to + 70

– 40 to + 85

– 55 to + 150

Unit

°C

Freescale Semiconductor, Inc...

Supply Voltage

Voltage on Any Pin

Output Current per Pin

Package Power Dissipation

Temperature Under Bias

Operating Temperature

Storage Temperature

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid appli-

cation of any voltage higher than maximum

rated voltages to these high–impedance cir-

cuits.

This CMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear feet

per minute is maintained.

NOTES:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for extended

periods of time could affect device reliability.

2. All voltages are referenced to VSS.

3. Power dissipation capability will be dependent upon package characteristics and use

environment.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V

0.3 V, TA = 0 to 70°C, Unless Otherwise Noted)

(TA = – 40 to + 85°C for Industrial Temperature Offering)

RECOMMENDED OPERATING CONDITIONS

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VDD

VIH

VIL

Min

3.0

2.2

– 0.5

Typ

3.3

—

Max

3.6

VDD + 0.3

0.8

Unit

* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width

≤

20 ns) for I

≤

20.0 mA.

** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width

≤

20 ns) for I

≤

20.0 mA.

DC CHARACTERISTICS

Parameter

Input Leakage Current (All Inputs, Vin = 0 to VDD)

Output Leakage Current (E = VIH, Vout = 0 to VDD)

Output Low Voltage

Output High Voltage

(IOL = + 4.0 mA)

(IOL = + 100

µA)

(IOH = – 4.0 mA)

(IOH = – 100

µA)

Symbol

Ilkg(I)

Ilkg(O)

VOL

VOH

Min

—

2.4

VDD – 0.2

Max

1.0

0.4

VSS + 0.2

—

Unit

µA

MCM6323A

For More Information On This Product,

Go to: www.freescale.com

MOTOROLA FAST SRAM

Freescale Semiconductor, Inc.

POWER SUPPLY CURRENTS

(See Note 1)

Parameter

AC Active Supply Current (Iout = 0 mA)

(VDD = Max, f = fmax)

AC Standby Current (E = VIH, VDD = Max,

f = fmax)

CMOS Standby Current (VDD = Max, f = 0 MHz,

≥

VDD – 0.2 V, Vin

≤

VSS + 0.2 V,

≥

VDD – 0.2 V)

Commerical

Industrial

Commerical

Industrial

Commerical

Industrial

Symbol

IDDA

ISB1

ISB2

6323A–10

140

150

6323A–12

135

140

6323A–15

130

135

Unit

Notes

NOTES:

1. Typical current = 25°C @ 3.3 V.

2. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V, VIL = 0 V).

CAPACITANCE

(f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter

Address Input Capacitance

Symbol

Cin

CI/O

Typ

—

Max

Unit

Freescale Semiconductor, Inc...

Control Input Capacitance

Input/Output Capacitance

AC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V

0.3 V, TA = 0 to +70°C, Unless Otherwise Noted)

(TA = – 40 to + 85°C for Industrial Temperature Offering)

Logic Input Timing Measurement Reference Level . . . . . . . . 1.50 V

Logic Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V

Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns

Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . 1.50 V

Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1

READ CYCLE TIMING

(See Notes 1, 2, 3, and 4)

MCM6323A–10

Parameter

Read Cycle Time

Address Access Time

Enable Access Time

Output Enable Access Time

Output Hold from Address Change

Enable Low to Output Active

Output Enable Low to Output Active

Enable High to Output High–Z

Output Enable High to Output High–Z

Byte Enable Access Time

Byte Enable Low to Output Active

Byte High to Output High–Z

Symbol

S b l

tAVAV

tAVQV

tELQV

tGLQV

tAXQX

tELQX

tGLQX

tEHQZ

tGHQZ

tBLQV

tBLQX

tBHQZ

Min

—

Max

—

MCM6323A–12

Min

—

Max

—

MCM6323A–15

Min

—

Max

—

Unit

U i

6, 7, 8

Notes

NOTES:

1. W is high for read cycle.

2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.

3. Device is continuously selected (E = VIL, G = VIL, and LB and/or UB = VIL).

4. Addresses valid prior to or coincident with E going low.

5. All read cycle timings are referenced from the last valid address to the first transitioning address.

6. Transition is measured 200 mV from steady–state voltage.

7. At any given voltage and temperature, tEHQZ (max) < tELQX (min), and tGHQZ (max) < tGLQX (min), both for a given device and from

device to device.

8. This parameter is sampled and not 100% tested.

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM6323A

Freescale Semiconductor, Inc.

OUTPUT

Z0 = 50

Ω

RL = 50

Ω

1.5 V

30 pF

Figure 1. Equivalent AC Test Load

2.0

1.5

DELTA TIME DELAY (ns)

1.0

Freescale Semiconductor, Inc...

OUTPUT

0.5

– 0.5

100

LUMPED CAPACITANCE, CL (pF)

@ T = 25°C, VDD = 3.3 V

Figure 2. Lumped Capacitive Load and Typical Derating Curve

+ 0.3

+ 0.2

DELTA TIME DELAY (ns)

+ 0.1

– 0.1

– 0.2

– 0.3

3.0

3.1

3.2

3.3

3.4

3.5

3.6

OUTPUT

30 pF

+ 0.3

+ 0.2

+ 0.1

– 0.1

– 0.2

– 50 – 25

100

VDD (V)

@ T = 25°C

T (°C)

@ VDD = 3.3 V

Figure 3. Derating Across Temperature and Voltage

MCM6323A

For More Information On This Product,

Go to: www.freescale.com

MOTOROLA FAST SRAM

Freescale Semiconductor, Inc.

READ CYCLE 1

(See Note 7)

tAVAV

A (ADDRESS)

tAXQX

Q (DATA OUT)

PREVIOUS DATA VALID

tAVQV

DATA VALID

READ CYCLE 2

(See Note 8)

tAVAV

Freescale Semiconductor, Inc...

A (ADDRESS)

tAVQV

tELQV

E (CHIP ENABLE)

tELQX

G (OUTPUT ENABLE)

tGLQV

tGLQX

LB, UB (BYTE ENABLE)

tBLQV

tBLQX

Q (DATA OUT)

DATA VALID

tBHQZ

tGHQZ

tEHQZ

MOTOROLA FAST SRAM

For More Information On This Product,

Go to: www.freescale.com

MCM6323A

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SCM6323ATS10AR Related Products

	SCM6323ATS10AR	SCM6323ATS12AR	SCM6323ATS15A	SCM6323ATS15AR
Description	IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC	IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC	IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC	IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC
Maker	NXP	NXP	NXP	NXP
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	10 ns	12 ns	15 ns	15 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of terminals	44	44	44	44
word count	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	64KX16	64KX16	64KX16	64KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A
Minimum standby current	3 V	3 V	3 V	3 V
Maximum slew rate	0.15 mA	0.14 mA	0.135 mA	0.135 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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