TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Transient Voltage Suppressors
d*
nte
ate
P
Case Style MPG06
1.0 (25.4)
MIN.
0.100 (2.54)
0.090 (2.29)
Features
Breakdown Voltage
6.8 to 43V
Peak Pulse Power
400W
Available in
uni-directional
only
0.125 (3.18)
0.115 (2.92)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Designed for the hood applications
• Available in uni-directional only
• Exclusive patented PAR
®
oxide passivated chip
construction
• 400W peak pulse power capability on 10/1000µs
waveform, repetition rate (duty cycle): 1.0%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• For devices with V
(BR)
≥10V,
I
D
are typically less
than 1.0µA
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Mechanical Data
1.0 (25.4)
MIN.
0.025 (0.635)
0.025 (0.559)
Dimensions in inches and (millimeters)
*
Patent #’s
4,980,315
5,166,769
5,278,094
Case:
Molded plastic over passivated junction
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes positive end (cathode)
Mounting Position:
Any
Weight:
0.0064 oz., 0.181 g
Packaging codes/options:
1/5K per Bulk Box, 50K/box
3/3K per Ammo Box (26mm Tape), 60K/box
4/5.5K per 13" Reel (52mm Tape), 22K/box
23/3K per Ammo Box (52mm Tape), 27K/box
50/2.5K per Radial-Tape Ammo Box, 10K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse power current with a 10/1000µs waveform
(1)(2)
(Fig. 3)
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Limit
Minimum 400
See Next Table
1.0
40
3.5
– 65 to +185
Unit
W
A
W
A
V
°C
Steady state power dissipation at T
L
= 75°C
lead lengths 0.25” (6.33mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage at 25A
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm)
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88404
03-May-02
www.vishay.com
1
TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Device Type
MIN
MAX
A
= 25°C unless otherwise noted)
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(Volts)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Reverse
Leakage
at V
WM
T
J
=150°C
I
D
(µA)
Peak Pulse
Current
I
PPM
(Note 2)
(Amps)
Maximum
Clamping
Voltage
at l
PPM
V
C
(Volts)
Maximum
Temp.
Coefficient
of
V
(BR)
(% /
°C)
TMPG06-6.8
TMPG06-6.8A
TMPG06-7.5
TMPG06-7.5A
TMPG06-8.2
TMPG06-8.2A
TMPG06-9.1
TMPG06-9.1A
TMPG06-10
TMPG06-10A
TMPG06-11
TMPG06-11A
TMPG06-12
TMPG06-12A
TMPG06-13
TMPG06-13A
TMPG06-15
TMPG06-15A
TMPG06-16
TMPG06-16A
TMPG06-18
TMPG06-18A
TMPG06-20
TMPG06-20A
TMPG06-22
TMPG06-22A
TMPG06-24
TMPG06-24A
TMPG06-27
TMPG06-27A
TMPG06-30
TMPG06-30A
TMPG06-33
TMPG06-33A
TMPG06-36
TMPG06-36A
TMPG06-39
TMPG06-39A
TMPG06-43
TMPG06-43A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
300
300
150
150
50.0
50.0
10.0
10.0
5.0
5.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000
1000
500
500
200
200
50.0
50.0
20.0
20.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
27.8
28.6
25.6
26.5
24.0
24.8
21.7
22.4
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
= square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88404
03-May-02
TMPG06-6.8 thru TMPG06-43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
TMPG06-10 — TMPG06-43A
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
1.0
TMPG06-6.8 — TMPG06-9.1A
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td — Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
tr = 10µsec.
Peak Value
I
PPM
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Fig. 4 – Typical Junction Capacitance
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1,000
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
— Junction Capacitance (pF)
100
Measured at
Stand-Off
Voltage, V
WM
td
0
0
1.0
2.0
3.0
4.0
10
1.0
10
100
200
t — Time (ms)
V
(BR)
— Breakdown Voltage (V)
PM
(AV)
, Steady State Power Dissipation (W)
Fig. 5 – Steady State Power
Derating Curve
I
FSM
— Peak Forward Surge Current (A)
1.00
60H
Z
Resistive or
Inductive Load
100
Fig. 6 - Maximum Non-Repetitive
Forward Surge Current
T
L
= 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.75
L = 0.375" (9.5mm)
Lead Lengths
0.50
1.6 x 1.6 x 0.040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
1
10
100
0
25
50
75
100
125
150
175
200
T
L
— Lead Temperature (°C)
Number of Cycles at 60 Hz
Document Number 88404
03-May-02
www.vishay.com
3
Embedded System
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