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1N5407

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    Ordinary rectifier diode   
File Size168KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1N5407 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

1N5407 Parametric

Parameter NameAttribute value
Case StyleDO-27
IF(A)3.0
Maximum recurrent peak reverse voltage800
Peak forward surge curre150
Maximum instantaneous forward voltage1.0
@IVA(A)3.0
Maximum reverse curre10.0
TRR(nS)/
classDiodes
1N5400-1N5408
3.0 AMP. Silicon Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@ T
A
= 75
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@ T
L
=75
o
C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Units
V
V
V
A
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
200
166
1.0
5.0
100
30
50
40
-65 to +150
-65 to +150
A
A
2
s
V
uA
uA
uA
pF
C/W
o
C
o
C
HT
IR
Cj
R
θJA
T
J
o
Storage Temperature Range
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
http://www.luguang.cn
mail:lge@luguang.cn

1N5407 Related Products

1N5407 1N5400 1N5401 1N5402 1N5406 1N5404
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Case Style DO-27 DO-27 DO-27 DO-27 DO-27 DO-27
IF(A) 3.0 3.0 3.0 3.0 3.0 3.0
Maximum recurrent peak reverse voltage 800 50 100 200 600 400
Peak forward surge curre 150 150 150 150 150 150
Maximum instantaneous forward voltage 1.0 1.0 1.0 1.0 1.0 1.0
@IVA(A) 3.0 3.0 3.0 3.0 3.0 3.0
Maximum reverse curre 10.0 10.0 10.0 10.0 10.0 10.0
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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