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HYB25R288180C-840

Description
Rambus DRAM, 16MX18, 40ns, CMOS, PBGA62, FBGA-62
Categorystorage    storage   
File Size1MB,96 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

HYB25R288180C-840 Overview

Rambus DRAM, 16MX18, 40ns, CMOS, PBGA62, FBGA-62

HYB25R288180C-840 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeBGA
package instructionFBGA-62
Contacts62
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Maximum access time40 ns
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B62
JESD-609 codee0
length11 mm
memory density301989888 bit
Memory IC TypeRAMBUS DRAM
memory width18
Number of functions1
Number of ports1
Number of terminals62
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA66,10X13,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
Maximum seat height1.05 mm
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.5 mm
Direct RDRAM
288-Mbit (512kx18x32s)
Overview
The INFINEON Direct RDRAM is a general purpose high-performance memory device suitable for
use in a broad range of applications including computer memory, graphics, video, and any other
application where high bandwidth and low latency are required.
The 288-Mbit Direct Rambus DRAMs (RDRAM
) are extremely high-speed CMOS DRAMs
organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits
600 MHz to 800 MHz transfer rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two
bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple,
simultaneous randomly addressed memory transactions. The separate control and data buses with
independent row and column control yield over 95% bus efficiency. The Direct RDRAM’s thirty-two
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large memory systems include power
management, byte masking, and x18 organization. The two data bits in the x18 organization are
general and can be used for additional storage and bandwidth or for error correction.
Features
• Highest sustained bandwidth per DRAM device
– 1.6 GB/s sustained data transfer rate
– Separate control and data buses for maximized efficiency
– Separate row and column control buses for easy scheduling and highest performance
– 32 banks: four transactions can take place simultaneously at full bandwidth data rates
• Low latency features
– Write buffer to reduce read latency
– 3 precharge mechanisms for controller flexibility
– Interleaved transactions
• Advanced power management:
– Multiple low power states allows flexibility in power consumption versus time to transition to
active state
– Power-down self-refresh
• Organization: 2 Kbyte pages and 32 banks, x18
– x18 organization allows ECC configurations or increased storage/bandwidth
• Uses Rambus Signaling Level (RSL) for up to 800 MHz operation
• The ODF function is allready implemented in this device and will be described in a later version
of this document.
Data Sheet
1
9.01

HYB25R288180C-840 Related Products

HYB25R288180C-840 HYB25M288180C-745 HYB25R288180C-745 HYB25M288180C-653 HYB25R288180C-653 HYB25R288180C-845 HYB25M288180C-845 HYB25M288180C-840
Description Rambus DRAM, 16MX18, 40ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 45ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 45ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 53ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 53ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 45ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 45ns, CMOS, PBGA62, FBGA-62 Rambus DRAM, 16MX18, 40ns, CMOS, PBGA62, FBGA-62
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA
package instruction FBGA-62 TBGA, BGA66,10X13,32 TBGA, BGA66,10X13,32 TBGA, BGA66,10X13,32 FBGA-62 FBGA-62 FBGA-62 FBGA-62
Contacts 62 62 62 62 62 62 62 62
Reach Compliance Code not_compliant unknown unknown unknown not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL
Maximum access time 40 ns 45 ns 45 ns 53 ns 53 ns 45 ns 45 ns 40 ns
Other features SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH
Maximum clock frequency (fCLK) 800 MHz 711 MHz 711 MHz 600 MHz 600 MHz 800 MHz 800 MHz 800 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B62 R-PBGA-B62 R-PBGA-B62 R-PBGA-B62 R-PBGA-B62 R-PBGA-B62 R-PBGA-B62 R-PBGA-B62
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
length 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm
memory density 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit
Memory IC Type RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM RAMBUS DRAM
memory width 18 18 18 18 18 18 18 18
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 62 62 62 62 62 62 62 62
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 16MX18 16MX18 16MX18 16MX18 16MX18 16MX18 16MX18 16MX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TBGA TBGA TBGA TBGA TBGA TBGA TBGA TBGA
Encapsulate equivalent code BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32 BGA66,10X13,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.05 mm 1.05 mm 1.05 mm 1.05 mm 1.05 mm 1.05 mm 1.05 mm 1.05 mm
self refresh YES YES YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V
Minimum supply voltage (Vsup) 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.5 mm 10.5 mm 10.5 mm 10.5 mm 10.5 mm 10.5 mm 10.5 mm 10.5 mm
Maker Infineon Infineon - Infineon Infineon Infineon Infineon Infineon
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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