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TD1N5224D

Description
Zener Diode, 2.8V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size180KB,7 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Download Datasheet Parametric View All

TD1N5224D Overview

Zener Diode, 2.8V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

TD1N5224D Parametric

Parameter NameAttribute value
MakerTak Cheong
Parts packaging codeDO-35
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage2.8 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance1%
Working test current20 mA
®
TAK CHEONG
SE M I CO N DU CTO R
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
Lead Temperature (1/16” from case for 10 seconds)
T
A
= 25°C unless otherwise noted
Value
500
-65 to +200
+200
+230
Units
mW
°C
°C
°C
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
52
xx
T
L
: Logo
Device Code : TC1N52xxT
Tolerance (T) : A =
10%
:
B = 5%
:
C = 2%
:
D = 1%
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.4 to 56 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Device Type
TC1N5221B
TC1N5222B
TC1N5223B
TC1N5224B
TC1N5225B
TC1N5226B
TC1N5227B
TC1N5228B
TC1N5229B
TC1N5230B
TC1N5231B
TC1N5232B
TC1N5233B
TC1N5234B
TC1N5235B
TC1N5236B
TC1N5237B
TC1N5238B
TC1N5239B
TC1N5240B
TC1N5241B
TC1N5242B
TC1N5243B
TC1N5244B
V
Z
@ I
ZT
(Volts)
Nominal
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
T
A
= 25°C unless otherwise noted
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
Z
ZT
@ I
ZT
(Ω)
Max
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
Z
ZK
@ I
ZK
= 0.25mA
(Ω)
Max
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
I
R
@ V
R
(µA)
Max
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
V
R
(Volts)
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
June 2004 / C
Page 1
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