2N3904 / MMBT3904 / PZT3904
2N3904
MMBT3904
C
PZT3904
C
E
C
B
E
C
TO-92
E
SOT-23
Mark: 1A
B
SOT-223
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
60
6.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3904
625
5.0
83.3
200
Max
*MMBT3904
350
2.8
357
**PZT3904
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2001 Fairchild Semiconductor Corporation
2N3904/MMBT3904/PZT3904, Rev A
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V, V
EB
= 3V
V
CE
= 30 V, V
EB
= 3V
40
60
6.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
40
70
100
60
30
300
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.65
0.2
0.3
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
I
C
= 100
µA,
V
CE
= 5.0 V,
R
S
=1.0kΩ,f=10 Hz to 15.7kHz
300
4.0
8.0
5.0
MHz
pF
pF
dB
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
35
35
200
50
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500
400
125 °C
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
β
= 10
125 °C
300
25 °C
0.1
25 °C
200
100
0
0.1
- 40 °C
0.05
- 40 °C
1
10
I
C
- COLLECTOR CURRENT (mA)
100
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
125 °C
0.6
125 °C
0.4
0.4
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
CAPACITANCE (pF)
10
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
100
10
1
0.1
V
CB
= 30V
5
4
3
2
C obo
C ibo
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
12
NF - NOISE FIGURE (dB)
10
8
6
4
2
0
0.1
I C = 100
µA,
R S = 500
Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
I C = 1.0 mA
I C = 1.0 mA
R S = 200Ω
I C = 50
µA
R S = 1.0 kΩ
I C = 0.5 mA
R S = 200Ω
V
CE
= 5.0V
10
I C = 5.0 mA
8
6
4
2
0
0.1
I C = 50
µA
I C = 100
µA
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE ( kΩ )
100
Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0
h
fe
P
D
- POWER DISSIPATION (W)
Power Dissipation vs
Ambient Temperature
0
20
40
60
80
100
120
140
160
180
1000
1
- CURRENT GAIN (dB)
SOT-223
0.75
θ
- DEGREES
TO-92
θ
0.5
SOT-23
0.25
h
V
CE
= 40V
I
C
= 10 mA
1
10
100
f - FREQUENCY (MHz)
fe
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
Turn-On Time vs Collector Current
500
I
B1
= I
B2
=
40V
TIME (nS)
100
15V
t
r @
V
CC
= 3.0V
2.0V
10
t
d @
V
CB
= 0V
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
I
c
10
Rise Time vs Collector Current
500
V
CC
= 40V
t
r
- RISE TIME (ns)
I
B1
= I
B2
=
I
c
10
100
T
J
= 125°C
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
500
t
S
- STORAGE TIME (ns)
T
J
= 25°C
Fall Time vs Collector Current
500
I
B1
= I
B2
=
t
f
- FALL TIME (ns)
T
J
= 125°C
I
c
10
I
B1
= I
B2
=
I
c
10
V
CC
= 40V
100
T
J
= 125°C
100
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Current Gain
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
500
100
Output Admittance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
fe
- CURRENT GAIN
100
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
h
re
- VOLTAGE FEEDBACK RATIO (x10
100
h
ie
- INPUT IMPEDANCE (k
Ω
)
_4
)
Input Impedance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
Voltage Feedback Ratio
10
7
5
4
3
2
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
10
1
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
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