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BAT42

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size38KB,1 Pages
ManufacturerKI Semiconductor
Websitehttp://www.kmis.co.kr/
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BAT42 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

BAT42 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsGlass
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum average forward current0.2000 A
KI SEMICONDUCTOR.CO
SCHOTTKY BARRIER SWITCHING DIODE
Features
·
·
·
·
Low Forward Voltage Drop
Fast Switching Speeds
Guard Ring Construction for Transient
Protection
Surface Mount Versions Available
(LL42 / LL43)
A
BAT42 / BAT43
A
B
D
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
C
Mechanical Data
·
·
·
·
·
Case: DO-35, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
d
R
qJA
T
j
, T
STG
BAT42
30
21
200
500
4.0
200
500
-55 to +125
BAT43
Unit
V
V
mA
mA
A
mW
K/W
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
@ t < 1.0s
Duty Cycle < 50%
Non-Repetitive Peak Forward Surge Current @ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
Maximum Forward Voltage Drop (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
All Types
BAT42
BAT42
BAT43
BAT43
Min
30
¾
¾
¾
0.26
¾
¾
¾
¾
80
Typ
¾
¾
Max
¾
1.00
0.40
0.65
0.33
0.45
0.50
100
¾
5.0
¾
Unit
V
Test Condition
I
RS
= 100mA Pulses
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2.0mA
I
F
= 15mA
V
R
= 25V
V
R
= 25V, Tj = 100°C
V
R
= 1.0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
R
L
= 100W, C
L
= 300pF,
f = 45MHz, V
RF
= 2.0V
V
FM
V
Maximum Peak Reverse Current (Note 2)
Junction Capacitance
Reverse Recovery Time
Rectification Efficiency
I
RM
C
j
t
rr
hv
¾
10
¾
¾
mA
pF
ns
%
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. t < 300ms, Duty Cycle < 2%.
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