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BC847AW

Description
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size657KB,5 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BC847AW Overview

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847AW Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionSOT-323, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor200
Rated crossover frequency250 MHz
MCC
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
NPN
General Purpose
Transistors
SOT-323
A
D
Features
Finish/RoHS Compliant ("P" Suffix designates
Lead Free
RoHS Compliant. See ordering information)
Low current (max. 100mA)
Low voltage (max. 65V)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Operating temperature : -65 to +150
Storage temperature : -65 to +150
Thermal resistance from junction to ambient*: 625K/W
Marking: BC846AW---1A ; BC846BW---1B
BC847AW---1E ; BC847BW---1F ; BC847CW---1G
BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
Emitter-Base Breakdown Voltage
(I
E
=1µAdc, I
C
=0)
BC846AW/BW, BC847AW/BW/CW
BC848AW/BW/CW
Collector Current (DC)
Peak Collector Current
Peak Base Current
Vdc
G
H
J
---
---
---
80
50
30
Vdc
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
V
(BR)CEO
---
---
---
65
45
30
Vdc
V
(BR)EBO
I
C
I
CM
I
BM
---
---
---
---
---
6
5
100
200
200
mAdc
mAdc
mAdc
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
* Transistor mounted on an FR4 printed-circuit board
Suggested Solder
Pad Layout
0.70
0.90
1.90
inches
mm
0.65
0.65
Revision: A
www.mccsemi.com
1 of
5
2011/01/01

BC847AW Related Products

BC847AW BC846BW BC848BW
Description 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.1000 A 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 65 V 65 V 65 V
Processing package description SOT-323, 3 PIN SOT-323, 3 PIN SOT-323, 3 PIN
state TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Number of components 1 1 1
transistor applications switch switch switch
Transistor component materials silicon silicon silicon
Transistor type Universal small signal Universal small signal Universal small signal
Minimum DC amplification factor 200 200 200
Rated crossover frequency 250 MHz 250 MHz 250 MHz

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