Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V, (Figure 10)
200
150
V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA
I
GSS
I
DSS
V
GS
=
±20V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
-
-
-
-
2.0
-
-
-
-
-
4.0
±100
25
250
V
V
V
nA
µA
µA
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRF230, IRF232
IRF231, IRF233
Gate Threshold Voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF230, IRF231
IRF232, IRF233
Drain to Source On Resistance (Note 2)
IRF230, IRF231
IRF232, IRF233
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
9.0
8.0
-
-
-
-
A
A
r
DS(ON)
I
D
= 5A, V
GS
= 10V, (Figure 8, 9)
-
-
0.25
0.4
4.8
-
-
-
-
19
10
9
0.4
0.6
-
30
50
50
40
30
-
-
Ω
Ω
S
ns
ns
ns
ns
nC
nC
nC
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
V
DS
≥
50V, I
D
= 5A, (Figure 12)
V
DD
= 90V, I
D
≈
5A,R
G
= 15Ω, R
L
=18Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
3.0
-
-
-
-
-
-
-
Q
g(TOT)
V
GS
= 10V, I
D
= 12A, V
DS
= 0.8V x Rated BV
DSS,
I
g(REF)
= 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Q
gs
Temperature
Q
gd
2
IRF230, IRF231, IRF232, IRF233
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
MIN
-
-
-
-
TYP
600
250
80
5.0
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
Internal Source Inductance
L
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.6
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Diode
G
D
MIN
-
-
TYP
-
-
MAX
9.0
36
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 9.0A, V
GS
= 0V, (Figure 13)
T
J
= 150
o
C, I
SD
= 9.0A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 9.0A, dI
SD
/dt = 100A/µs
-
-
-
-
450
3.0
2.0
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
京公网安备 11010802033920号
EEWORLD
