NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
envelope. They are intended for output stages in audio equipment, general amplifiers, and
analogue switching application.
PNP complements are BDT62-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
Value
60
80
100
120
60
80
100
120
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
BDT63B
BDT63C
BDT63
BDT63A
5
V
I
C
Collector Current
BDT63B
BDT63C
BDT63
BDT63A
10
A
I
CM
Collector Peak Current
BDT63B
BDT63C
15
A
26/09/2012
COMSET SEMICONDUCTORS
1|5
SEMICONDUCTORS
BDT63-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Value
Unit
I
B
Base Current
250
mA
P
T
Power Dissipation
@ T
mb
< 25°
90
W
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Value
Unit
R
thJ-MB
From junction to mounting base
1.39
K/W
R
thJ-A
From junction to ambient in free air
70
K/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
I
E
= 0, V
CB
= V
CBO
max
I
CBO
Collector Cutoff
Current
I
E
= 0, V
CB
=1/2
V
CBO
max
T
J
= 150 °C
I
E
= 0, V
CE
= 1/2
V
CEO
max
I
CEO
Collector Cutoff
Current
I
EBO
Emitter Cutoff
Current
V
EB
= 5 V, I
C
= 0
V
CEO
Collector-Emitter
Breakdown Voltage
I
C
= 30 mA, I
B
= 0
I
C
= 3 A, I
B
= 12 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
= 8 A, I
B
=80 mA
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
-
-
0.2
mA
-
-
2
mA
-
-
0.5
mA
-
60
80
100
120
-
-
-
-
-
-
-
5.0
-
-
-
-
2
mA
V
V
-
-
2.5
26/09/2012
COMSET SEMICONDUCTORS
3|5
SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Min
Typ
Max
Unit
V
BE(on)
Base-Emitter Voltage
I
C
= 3 A, V
CE
= 3 V
(*)
-
-
2.5
V
V
CE
= 3.0 V, I
C
= 3 A
h
FE
DC Current Gain (*)
V
CE
= 3.0 V, I
C
= 10 A
1000
-
-
-
-
3000
-
V
ECF
C-E Diode Forward
Voltage
I
F
= 3 A
-
-
2
V
C
OB
Output Capacitance
I
E
= 0, V
CB
= 10 V
f
test
= 1MHz
-
100
-
pF
SWITCHING TIMES
Symbol
t
on
t
off
Ratings
turn-on time
turn-off time
Test Condition(s)
I
C
= 3 A , V
CC
= 10 V
I
B1
= -I
B2
= 12 mA
Min
-
-
Typ
1
5
Max
2.5
10
Unit
µs
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
26/09/2012
COMSET SEMICONDUCTORS
4|5
SEMICONDUCTORS
BDT63-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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