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BF5020R

Description
Silicon N-Channel MOSFET Tetrode
CategoryDiscrete semiconductor    The transistor   
File Size564KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BF5020R Overview

Silicon N-Channel MOSFET Tetrode

BF5020R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BF5020...
Silicon N-Channel MOSFET Tetrode
Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
Integrated gate protection diodes
Excellent noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
4
1
2
Drain
AGC
HF
Input
G2
G1
R
G1
V
GG
HF Output
+ DC
GND
EHA07461
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BF5020
BF5020R
BF5020W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
Pin Configuration
3 = G2 4 = G1 -
3 = G1 4 = G2 -
3 = G1 4 = G2 -
-
-
-
Marking
KYs
KYs
KYs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
S
76 °C, BF5020, BF5020R
T
S
94 °C, BF5020W
Storage temperature
Channel temperature
T
stg
T
ch
Symbol
V
DS
I
D
I
G1S
,
I
G2S
V
G1S
,
V
G2S
P
tot
200
200
-55 ... 150
150
°C
Value
8
25
±
10
±
6
Unit
V
mA
mA
V
mW
1
2009-10-01

BF5020R Related Products

BF5020R BF5020 BF5020W
Description Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 12 V 12 V 12 V
Maximum drain current (Abs) (ID) 0.025 A 0.025 A 0.025 A
Maximum drain current (ID) 0.025 A 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
Guideline AEC-Q101 AEC-Q101 AEC-Q101
surface mount YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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