BF5020...
Silicon N-Channel MOSFET Tetrode
•
Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
•
Integrated gate protection diodes
•
Excellent noise figure
•
High gain, high forward transadmittance
•
Improved cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
4
1
2
Drain
AGC
HF
Input
G2
G1
R
G1
V
GG
HF Output
+ DC
GND
EHA07461
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BF5020
BF5020R
BF5020W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
Pin Configuration
3 = G2 4 = G1 -
3 = G1 4 = G2 -
3 = G1 4 = G2 -
-
-
-
Marking
KYs
KYs
KYs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
S
≤
76 °C, BF5020, BF5020R
T
S
≤
94 °C, BF5020W
Storage temperature
Channel temperature
T
stg
T
ch
Symbol
V
DS
I
D
I
G1S
,
I
G2S
V
G1S
,
V
G2S
P
tot
200
200
-55 ... 150
150
°C
Value
8
25
±
10
±
6
Unit
V
mA
mA
V
mW
1
2009-10-01
BF5020...
Thermal Resistance
Parameter
Channel - soldering point
1)
BF5020, BF5020R
BF5020W
Symbol
R
thchs
≤
370
≤
280
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 20 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source leakage current
V
G2S
= 6 V,
V
G1S
= 0 ,
V
DS
= 0
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 120 kΩ
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 20 µA,
V
G1S
= 2 V
1
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
max.
-
15
15
50
50
100
-
-
-
mA
V
nA
V
typ.
-
-
-
-
-
-
14
0.7
0.7
V
(BR)DS
+V
(BR)G1SS
+V
(BR)G2SS
+I
G1SS
+I
G2SS
I
DSS
I
DSX
V
G1S(p)
V
G2S(p)
12
6
6
-
-
-
-
-
-
2
2009-10-01
BF5020...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
- (verified by random sampling)
Forward transconductance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Gate1 input capacitance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Output capacitance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V
Power gain
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 800 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 45 MHz
Noise figure
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 800 MHz
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 45 MHz
Gain control range
V
DS
= 5 V,
V
G2S
= 4...0 V
Cross-modulation
1)
,
V
DS
= 5 V,
R
G1
= 120 kΩ
AGC
= 0
AGC
= 10 dB
AGC
= 40 dB
1
Input
Unit
max.
-
-
-
dB
mS
pF
typ.
34
2.4
1
g
fs
C
g1ss
C
dss
G
p
-
-
-
-
-
F
-
-
∆G
p
X
mod
-
-
-
-
26
32
-
-
dB
1.2
0.8
45
-
-
-
dBµV
98
96
106
-
-
-
level for
k
= 1%;
f
w
= 50 MHz,
f
unw
= 60 MHz
3
2009-10-01
BF5020...
Total power dissipation
P
tot
=
ƒ(T
S
)
BF5020W
Total power dissipation
P
tot
=
ƒ(T
S
)
BF5020, BF5020R
220
mA
220
mW
180
160
180
160
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Output characteristics
I
D
=
ƒ(V
DS
)
Gate 1 current
I
G1
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
20
mA
1.5V
180
µA
16
14
1.4V
140
120
100
80
I
G1
I
D
12
1.3V
10
8
6
1.1V
1.2V
4V
3.5V
3V
2.5V
2V
60
40
20
0
0
4
2
0
0
V
2
4
6
8
12
0.5
1
1.5
2
V
3
V
DS
V
G1S
4
2009-10-01
BF5020...
Gate 1 forward transconductance
g
fs
=
ƒ(I
D
)
V
DS
= 5V,
V
G2S
= Parameter
50
mS
4V
Drain current
I
D
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
30
mA
40
35
3V
24
22
g
fs
30
25
20
15
10
5
0
0
1.5V
2V
I
D
20
18
16
14
12
10
8
6
4
2
4V
3V
2V
1.5 V
1V
5
10
15
20
25
30
35
mA
45
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
1.8
I
D
V
G1S
Drain current
I
D
=
ƒ(V
GG
)
V
DS
= 5V,
V
G2S
= 4V,
R
G1
= 120 kΩ
(connected to
V
GG,
V
GG =gate1 supply voltage)
16
mA
Drain current
I
D
=
ƒ(V
GG
)
V
G2S
= 4V
R
G1
= Parameter in kΩ
24
mA
68K
20
12
18
16
82K
100K
120K
I
D
I
D
10
14
12
10
150K
180K
8
6
8
4
6
4
2
2
0
0
1
2
3
V
5
0
0
1
2
3
4
V
6
V
GG
V
GG
=V
DS
5
2009-10-01
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