BFR193T / BFR193TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
•
•
•
•
•
Low noise figure
High transition frequency f
T
= 8 GHz
e3
Excellent large-signal behaviour
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
2
1
3
Applications
For low-noise, high-gain applications such as power
amplifiers up to 2GHz and for linear broadband ampli-
fiers.
2
3
Mechanical Data
Typ:
BFR193T
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Marking:
RC
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFR193TW
Case:
SOT-323 Plastic case
Weight:
approx. 6.0 mg
Marking:
WRC
Electrostatic sensitive device.
Observe precautions for handling.
13581
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
45 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
80
420
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
250
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μm
Cu
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
1
BFR193T / BFR193TW
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test condition
V
CE
= 20 V, V
EB
= 0
V
CB
= 10 V
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
50
12
0.1
100
0.5
150
Min
Typ.
Max
100
100
1
Unit
μA
nA
μA
V
V
DC forward current transfer ratio V
CE
= 8 V, I
C
= 30 mA
www.vishay.com
2
Document Number 85073
Rev. 1.3, 28-Apr-05
BFR193T / BFR193TW
Vishay Semiconductors
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Test condition
V
CE
= 8 V, I
C
= 50 mA,
f = 1 GHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
Z
S
= Z
Sopt
,Z
L
=50Ω, f = 900
MHz, V
CE
= 8 V, I
C
= 10 mA
Z
S
= Z
Sopt
,Z
L
=50Ω, f = 2 GHz,
V
CE
= 8 V, I
C
= 10 mA
Power gain
Z
S
= Z
Sopt
,Z
L
=50Ω, f = 900
MHz, V
CE
= 8 V, I
C
= 30 mA
Z
S
= Z
Sopt
,Z
L
=50Ω, f = 2 GHz,
V
CE
= 8 V,
I
C
= 30 mA
Transducer gain
Z
O
=50Ω, f = 900 MHz,
V
CE
= 8 V, I
C
= 30 mA
Z
O
=50Ω, f = 2 GHz, V
CE
= 8 V,
I
C
= 30 mA
Third order intercept point at
output
V
CE
= 8 V, I
C
= 50 mA,
f = 900 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
F
G
pe
G
pe
Min
6
0.6
Typ.
8
1.0
0.25
1.6
1.2
2.1
15
9
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
|S
21e
|
2
|S
21e
|
2
IP
3
13
7
34
dB
dB
dBm
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
3
BFR193T / BFR193TW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85073
Rev. 1.3, 28-Apr-05
www.vishay.com
5
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