FR20AAD2 ... FR20GKD2
FR20AAD2 ... FR20GKD2
Superfast Silicon Rectifiers – Single Diode / Two Polarities
Superschnelle Silizium-Gleichrichter – Einzeldiode / Zwei Polaritäten
Version 2012-10-01
1.2
4.5
±
0.2
10.25
±0.5
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
1.3
20 A
50...400 V
TO-263AB
D²PAK
1.8 g
4
Type
Typ
1
2
3
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
0.8
0.4
5.08
4
4
K
1 2 3
1 2 3
A
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type / Typ
Polarity / Polarität
K
(Standard)
FR20AKD2
FR20BKD2
FR20DKD2
FR20GKD2
A
(Reverse)
FR20AAD2
FR20BAD2
FR20DAD2
FR20GAD2
50
100
200
400
50
100
200
400
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Repet. peak reverse voltage Surge peak reverse volt.
Period. Spitzensperrspanng. Stoßspitzensperrspanng.
V
RRM
[V]
V
RSM
[V]
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
1
)
I
F
= 5 A
< 0.84
< 0.84
< 0.84
< 0.84
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
j
T
S
I
F
= 20 A
< 0.96
< 0.96
< 0.96
< 0.96
20 A
80 A
2
)
375/390 A
680 A
2
s
-50...+150°C
+200°C
-50...+175°C
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Storage temperature – Lagerungstemperatur
1
2
T
j
= 25°C
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
FR20AAD2 ... FR20GKD2
Characteristics
Leakage current
Sperrstrom
Reverse recovery time
Sperrverzug
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
t
rr
R
thC
Kennwerte
< 5 µA
< 250 µA
< 200 ns
< 1.5 K/W
I
F
= 0.5 A through/über
I
R
= 1 A to I
R
= 0.25 A
120
[%]
100
10
3
[A]
10
2
T
j
= 125°C
80
10
T
j
= 25°C
60
40
1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
-1
400a-(5a-0,8v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
http://www.diotec.com/
© Diotec Semiconductor AG
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