BTA204S series B and C
Three-quadrant triacs high commutation
Rev. 03 — 24 May 2005
Product data sheet
1. Product profile
1.1 General description
Passivated high commutation triac in a SOT428 (DPAK) plastic package. Intended for use
in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices
will commutate the full rated RMS current at the maximum rated junction temperature,
without the aid of a snubber.
1.2 Features
s
High maximum junction temperature
s
High commutation capability
1.3 Applications
s
Motor control
s
Industrial and domestic heating
1.4 Quick reference data
s
V
DRM
≤
600 V (BTA204S-600B)
s
V
DRM
≤
600 V (BTA204S-600C)
s
I
TSM
≤
25 A
s
V
DRM
≤
800 V (BTA204S-800B)
s
V
DRM
≤
800 V (BTA204S-800C)
s
I
T(RMS)
≤
4 A
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base
[1]
Simplified outline
mb
Symbol
T2
sym051
T1
G
2
1
3
SOT428 (DPAK)
[1]
Connected to main terminal 2 (T2)
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
3. Ordering information
Table 2:
Ordering information
Package
Name
BTA204S-600B
BTA204S-600C
BTA204S-800B
BTA204S-800C
DPAK
Description
plastic single-ended surface mounted package; 3 leads (one lead cropped)
Version
SOT428
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
Conditions
BTA204S-600B; BTA204S-600C
BTA204S-800B; BTA204S-800C
full sine wave; T
mb
≤
107
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior to surge;
see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
Min
-
-
-
Max
600
800
4
Unit
V
V
A
-
-
-
-
-
-
-
25
27
3.1
100
2
5
5
0.5
+150
125
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6 A/µs.
9397 750 14862
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
2 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
8
P
tot
(W)
6
α
α
001aac660
101
T
mb(max)
104 (°C)
107
110
113
116
α
= 180
120
90
60
30
4
2
119
122
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
30
I
T
I
TSM
(A)
20
001aac331
I
TSM
t
T
T
j(init)
= 25
°C
max
10
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal cycles; maximum values
9397 750 14862
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
3 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
10
3
I
T
I
TSM
(A)
001aac330
I
TSM
t
T
T
j(init)
= 25
°C
max
10
2
(2)
(1)
10
10
−5
10
−4
10
−3
10
−2
t (s)
10
−1
t
p
≤
20 ms
(1) dl
T
/dt limit
(2) T2− G+ quadrant
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
12
I
T(RMS)
(A)
8
3
001aac333
5
I
T(RMS)
(A)
4
001aac662
107
°C
2
4
1
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
f = 50 Hz;
T
mb
≤
107
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature
9397 750 14862
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
4 of 13
Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
5. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
full cycle
half cycle
printed-circuit board (FR4)
mounted as in
Figure 13
Min
-
-
-
Typ
-
-
75
Max
3.0
3.7
-
Unit
K/W
K/W
K/W
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Symbol Parameter
10
unidirectional
Z
th(j−mb)
(K/W)
1
bidirectional
001aac681
10
−1
P
D
10
−2
t
p
t
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(S)
10
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
9397 750 14862
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 May 2005
5 of 13
京公网安备 11010802033920号
EEWORLD
