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BYM36E

Description
2.9 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size161KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BYM36E Overview

2.9 A, 1000 V, SILICON, RECTIFIER DIODE

BYM36A-BYM36G
Fast Recovery Rectifiers
VOLTAGE RANGE: 200 --- 1400 V
CURRENT: 3.0 A
Features
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol
nn
and s im ilar s olvents
DO - 27
Mechanical Data
Cas e:JEDEC DO--27,m olded plas tic
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYM
36A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
Peak forwardsurge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
@T
A
=75
BYM
36B
400
280
200
BYM
36C
600
420
600
BYM
36D
800
560
800
3.0
BYM
36E
1000
700
1000
BYM
36F
1200
840
1200
BYM
36G
1400
980
1400
UNITS
V
V
V
A
V
RR M
V
RMS
V
DC
I
F(AV)
200
140
200
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
100
200.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.57
5.0
100.0
150
32
22
-55 ---- + 150
-55 ---- + 150
250
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to am bient.
http://www.luguang.cn
mail:lge@luguang.cn

BYM36E Related Products

BYM36E BYM36A BYM36C BYM36D BYM36F BYM36G BYM36B
Description 2.9 A, 1000 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE 2.9 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE
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