BY228/13 / BY228/15
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949588
Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Parts Table
Part
BY228-13
BY228-15
Type differentiation
V
R
= 1000 V; I
FAV
= 3 A
V
R
= 1200 V; I
FAV
= 3 A
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage, non
repetitive
Reverse voltage
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 0.4 A
Test condition
I
R
= 100
µA
Part
BY228/13
BY228/15
see electrical characteristics
t
p
= 10 ms, half sinewave
BY228/13
BY228/15
Symbol
V
RSM
V
RSM
V
R
V
R
I
FSM
I
FAV
T
j
T
stg
E
R
Value
1300
1500
1000
1200
50
3
140
- 55 to + 175
10
Unit
V
V
V
V
A
A
°C
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
on PC board with spacing
25 mm
Symbol
R
thJA
Value
70
Unit
K/W
Document Number 86004
Rev. 1.6, 14-Apr-05
www.vishay.com
1
BY228/13 / BY228/15
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
I
F
= 5 A
V
R
= 1000 V
V
R
= 1200 V
V
R
= 1000 V, T
j
= 140 °C
V
R
= 1200 V, T
j
= 140 °C
Total reverse recovery time
Reverse recovery time
I
F
= 1 A, - di
F
/dt = 0.05 A/µs
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0,25 A
BY228-13
BY228-15
BY228-13
BY228/15
Test condition
Part
Symbol
V
F
I
R
I
R
I
R
I
R
t
rr
t
rr
2
2
Min
Typ.
Max
1.5
5
5
140
140
20
2
Unit
V
µA
µA
µA
µA
µs
µs
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
- Therm. Resist. Junction/Ambient (K/W)
40
3.5
I
FA
- Average Forward Current ( A )
30
3.0
2.5
2.0
1.5
1.0
0.5
0
0
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
l = 10 mm
20
l
l
10
T
L
0
5
10
15
20
25
30
0
94 9081
l - Lead Length ( mm )
16403
25
50
75
100
125
150
T
amb
- Ambient Temperature (
°
C )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
10
T
j
=150
°C
1
T
j
= 25°C
0.1
0.01
I
R
- Reverse Current (
µA
)
I
F
- Forward Current (A)
1000
V
R
= V
RRM
100
10
0.001
0.0
16402
1
0.5
1.0
1.5
2.0
2.5
3.0
16404
25
50
75
100
125
150
V
F
- Forward Voltage ( V )
T
j
- Junction T emperature (
°
C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86004
Rev. 1.6, 14-Apr-05
BY228/13 / BY228/15
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86004
Rev. 1.6, 14-Apr-05
京公网安备 11010802033920号
EEWORLD
