DB107 datasheet, PDF - EEWORLD Datasheet

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DB107: Description1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size1MB，2 Pages; ManufacturerJuxing Electronic; Websitehttp://www.trr-jx.com

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DB107 Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DB107 Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Minimum breakdown voltage	1000 V
Maximum average input current	1 A
Processing package description	ROHS COMPLIANT, PLASTIC, DB-1, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	IN-line
Terminal form	THROUGH-hole
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Bridge, 4 ELEMENTS
Diode component materials	silicon
Diode type	bridge rectifier diode
Phase	1
Maximum repetitive peak reverse voltage	1000 V
Maximum non-repetitive peak forward current	40 A

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DB101-DB107

BRIDGE RECTIFIERS

Features

· Glass Passivated Die Construction

· Low leakage

· Ideal for printed circuit board

· Surge overload rating-30A peak

· Designed for Surface Mount Application

· Plastic Material-UL Flammability 94V-O

Mechanical Data

· Case:Reliable low cost construction

utilizing molded plastic technique

· Terminals:Plated Leads Solderable per

MIL-STD-202,Method208

· Polarity:As Marked on Case

· Mounting Position:Any

· Marking:Type Number

Maximum Ratings and Electrical Characteristics

@TA=25℃ unless otherwise specified

Single Phase,half wave,60Hz,resistive or inductive load.For capacitive load,derate current by 20%.

Parameter

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum Average forward output rectified

current @TA=40℃

Peak forward surge current 8.3ms single

sine-wave superimposed on rated load(JEDEC

Method)

Maximum instantaneous forward voltage drop

per diode @1.0A

Maximum DC reverse current at TA=25℃

rated DC blocking voltage per leg TA=125℃

Typical thermal resistance per leg (Note1)

Operating junction temperature range

storage temperature range

Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNIT

RRM

RMS

I(AV)

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

RθJA

RθJL

Tstg

1.1

5.0

500

-55 to +150

℃/W

℃

Note:

1.Mounted on glass epoxy PC board with 1.3mm² solder pad.

2.Mounted on aluminum substrate PC board with 1.3mm² solder pad.

3.Measured at 1.0MHz and applied reverse of 4.0V D.C.

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DB107 Related Products

	DB107	DB101	DB102	DB103	DB104	DB105	DB106
Description	1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE

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