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DB103

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerJuxing Electronic
Websitehttp://www.trr-jx.com
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DB103 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

DB101-DB107
BRIDGE RECTIFIERS
Features
· Glass Passivated Die Construction
· Low leakage
· Ideal for printed circuit board
· Surge overload rating-30A peak
· Designed for Surface Mount Application
· Plastic Material-UL Flammability 94V-O
Mechanical Data
· Case:Reliable low cost construction
utilizing molded plastic technique
· Terminals:Plated Leads Solderable per
MIL-STD-202,Method208
· Polarity:As Marked on Case
· Mounting Position:Any
· Marking:Type Number
Maximum Ratings and Electrical Characteristics
@TA=25℃ unless otherwise specified
Single Phase,half wave,60Hz,resistive or inductive load.For capacitive load,derate current by 20%.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Average forward output rectified
current @TA=40℃
Peak forward surge current 8.3ms single
sine-wave superimposed on rated load(JEDEC
Method)
Maximum instantaneous forward voltage drop
per diode @1.0A
Maximum DC reverse current at TA=25℃
rated DC blocking voltage per leg TA=125℃
Typical thermal resistance per leg (Note1)
Operating junction temperature range
storage temperature range
Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNIT
V
RRM
V
RMS
V
DC
I(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1
600
420
600
800
560
800
1000
700
1000
V
V
V
A
IF
SM
VF
IR
RθJA
RθJL
TJ
Tstg
30
1.1
5.0
500
40
15
-55 to +150
-55 to +150
A
V
uA
℃/W
Note:
1.Mounted on glass epoxy PC board with 1.3mm² solder pad.
2.Mounted on aluminum substrate PC board with 1.3mm² solder pad.
3.Measured at 1.0MHz and applied reverse of 4.0V D.C.
http://www.trr-jx.com
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DB103 DB101 DB102 DB104 DB105 DB107 DB106
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