CYStech Electronics Corp.
20Amp. Schottky Barrier Rectifiers
Spec. No. : C458E3
Issued Date : 2009.01.20
Revised Date :
Page No. : 1/4
MBR20100BE3
Features
•
Low V
F
and low I
R
type
•
Metal silicon junction, major carrier conduction
•
High current capability
•
Guardring for over voltage protection
•
Low power loss, high efficiency
•
High surge capability
•
High temperature soldering guaranteed : 260℃/10s, 0.25”(6.35mm) from case
•
For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
•
RoHS compliant and Halogen-free package
Mechanical Data
•
Case: JEDEC TO-220AB molded plastic
•
Mounting Position: Any
•
Weight: 0.08 ounce, 2.24 grams
•
Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026
•
Epoxy: UL 94V-0 rate flame retardant
•
Mounting Torque : 5 in-lbs max
Equivalent Circuit
MBR20100BE3
Outline
TO-220AB
AKA
MBR20100BE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C458E3
Issued Date : 2009.01.20
Revised Date :
Page No. : 2/4
Maximum Ratings and Electrical Characteristics (Per Diode Leg)
(
Rating at 25°C ambient temperature unless otherwise specified.
resistive or inductive load.
Single phase, half wave, 60Hz,
For capacitive load, derate current by 20%.)
Symbol
V
RRM
V
RMS
V
DC
V
F
Limits
100
70
100
0.85
0.75
0.95
0.85
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous forward voltage at I
F
=10A, T
C
=25℃
(Note 1)
I
F
=10A, T
C
=125℃
I
F
=20A, T
C
=25℃
I
F
=20A, T
C
=125℃
Per Diode
Per Device
Units
V
V
V
V
Maximum Average forward rectified
current @ T
C
=145℃
Peak repetitive forward current (Rated V
R
, square wave, 20kHz)
@T
C
=135℃
Peak forward surge current @8.3ms single half sine wave
superimposed on rated load (JEDEC method)
Peak repetitive reverse surge current
(Note 1 ), TJ<175℃
I
F(AV)
I
FRM
I
FSM
I
RRM
I
R
dV/dt
C
J
T
stg
T
J
10
20
20
135
3.5
5.0
5.0
10,000
190
8000
-55 ~ +175
-65 ~ +175
A
A
A
A
μA
mA
V/μs
pF
V
℃
℃
Maximum instantaneous reverse current at
V
R
=100V, T
C
= 25℃
V
R
=100V, T
C
= 125℃
Voltage rate of change, (rated V
R
)
Typical junction capacitance @ f=1MHz and applied 4V reverse voltage
ESD susceptibility
(Note 2)
Storage temperature range
Operating junction temperature range
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case
Maximum Thermal Resistance, Junction-to-ambient
Symbol
R
th,j-c
R
th,j-a
Value
2
60
Unit
°C/W
°C/W
Ordering Information
Device
MBR20100BE3
Package
TO-220AB
(Pb-free)
Shipping
50 pcs / Tube, 40 Tubes/Box
Marking
20100B
MBR20100BE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
25
Peak Forward Surge Current---I
FSM
(A)
Spec. No. : C458E3
Issued Date : 2009.01.20
Revised Date :
Page No. : 3/4
Maximum Non-Repetitive Forward Surge Current
200
Tj=150℃, 8.3ms Single
Half Sine Wave, JEDEC
method, Per leg
Average Forward Current---Io(A)
20
15
10
5
0
0
25
50
75
100
125
150
175
Case Temperature---T
C
(℃)
150
resistive or inductive load
100
50
0
1
10
Number of Cycles at 60Hz
100
Forward Current vs Forward Voltage
100000
Instantaneous Forward Current---I
F
(mA)
Per leg
Junction Capacitance vs Reverse Voltage
1000
Junction Capacitance---C
J
(pF)
Tj=25℃, f=1.0MHz
Per Leg
10000
1000
100
10
1
0
0.2
0.4 0.6 0.8
1
1.2
Forward Voltage---V
F
(V)
1.4
Tj=150℃
Tj=25℃
Pulse width=300μs,
1% Duty cycle
100
0.1
1
Reverse Voltage---V
R
(V)
10
Reverse Leakage Current vs Reverse Voltage
100
Reverse Leakage Current---I
R
(μA)
Tj=125℃
10
Tj=75℃
1
0.1
Tj=25℃
Per leg
0.01
0
20
40
60
80
100 120 140
Percent of Rated Peak
Reverse Voltage---(%)
MBR20100BE3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
A
D
B
E
C
Device
Name
Spec. No. : C458E3
Issued Date : 2009.01.20
Revised Date :
Page No. : 4/4
20100B
H
I
G
4
P
M
3
2
1
N
K
Date Code
□□
O
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Style: Pin
1.Anode 2.Cathode 3.Anode
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*
0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*
16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*
0.1508
0.0295 0.0374
0.0449 0.0551
-
*
0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
-
*
3.83
0.75
0.95
1.14
1.40
-
*
2.54
12.70
14.27
14.48
15.87
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: KFC ; tin plated
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MBR20100BE3
CYStek Product Specification
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