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KSA812OMTF

Description
Low Frequency Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSA812OMTF Overview

Low Frequency Amplifier

KSA812OMTF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
KSA812
KSA812
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC1623
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-60
-50
-5
-100
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
-0.55
90
200
-0.18
-0.62
180
4.5
Min.
Typ.
Max.
-0.1
-0.1
600
-0.3
-0.65
V
V
MHz
pF
Units
µA
µA
h
FE
Classification
Classification
h
FE
O
90 ~ 180
Marking
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
D1 O
h
FE
grade
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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