TVR1JTPA2 datasheet, PDF - EEWORLD Datasheet

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TVR1JTPA2: DescriptionDIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TVR1JTPA2 Overview

DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode

TVR1JTPA2 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	0.5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	20 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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TVR1JTPA2 Related Products

	TVR1JTPA2	TVR1GTPA1	TVR1BTPA1	TVR1GTPA2	TVR1BTPA2	TVR1JTPA1
Description	DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.5 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.5 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.5 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.5 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	400 V	100 V	400 V	100 V	600 V
Maximum reverse recovery time	20 µs	20 µs	20 µs	20 µs	20 µs	20 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor

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