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BSO080P03SH

Description
12.6 A, 30 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size321KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSO080P03SH Overview

12.6 A, 30 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET

BSO080P03SH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC PACKAGE-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)248 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)12.6 A
Maximum drain current (ID)12.6 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)60 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSO080P03S H
OptiMOS™-P
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
-30
8
-14.9
V
mΩ
A
PG-DSO-8
Type
BSO080P03S H
Package
P-DSO-8
Marking
080P3S
lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
≤10
secs
Continuous drain current
I
D
T
A
=25 °C
1)
T
A
=70 °C
1)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 HBM
260
55/150/56
T
A
=25 °C
1)
2.5
T
A
=25 °C
2)
I
D
=-14.9 A,
R
GS
=25
-14.9
-11.9
-60
248
±25
1.79
-55 ... 150
mJ
V
W
°C
steady state
-12.6
-10
A
Unit
Rev. 1.31
page 1
2010-02-10
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