Preliminary Technical Information
High Voltage
IGBTs
IXGH24N170A
IXGT24N170A
V
CES
= 1700V
I
C25
= 24A
V
CE(sat)
≤
6.0V
t
fi(typ)
= 40ns
TO-247 (IXGH)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω
Clamped Inductive Load
T
J
= 125°C, V
CE
= 1200V, V
GE
= 15V, R
G
= 22Ω
T
C
= 25°C
Maximum Ratings
1700
1700
± 20
± 30
24
16
75
I
CM
= 50
0.8 • V
CES
10
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
V
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
Optimized for Low Conduction and
Switching Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
G = Gate
E = Emitter
C
= Collector
TAB = Collector
TO-268 (IXGT)
G
C
C (TAB)
E
G
E
C (TAB)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
300
260
1.13/10
6
4
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
GE
= 0V
I
C
= 250μA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
= ± 20V
I
C
= 16A, V
GE
= 15V, Note 1
T
J
= 125°C
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1700
3.0
5.0
V
V
50
μA
1 mA
±100
4.5
4.8
6.0
nA
V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS98995C(05/09)
IXGH24N170A
IXGT24N170A
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive Load, T
J
= 125°C
I
C
= 24A, V
GE
= 15V
V
CE
= 0.5
•
V
CES
, R
G
= 10Ω
Note 1
Inductive Load, T
J
= 25°C
I
C
= 24A, V
GE
= 15V
V
CE
= 0.5
•
V
CES
, R
G
= 10Ω
Note 1
I
C
= 16A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 24A, V
CE
= 10V, Note 2
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
13
22
2860
198
58
140
18
60
21
36
2.97
336
40
0.79
23
31
3.60
360
96
1.47
0.25
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.50 °C/W
°C/W
e
TO-247 (IXGH) Outline
1
2
3
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
80
1.50
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
2.2
2.6
A
2
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Notes:
1.
2.
Switching times may increase for V
CE
(Clamp) > 0.5 • V
CES
,
higher T
J
or increased R
G
.
Pulse Test, t
≤
300μs; Duty Cycle, d
≤
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH24N170A
IXGT24N170A
Fig. 1. Output Characteristics
@ 25ºC
48
44
40
36
V
GE
= 15V
13V
11V
180
160
9V
140
120
11V
V
GE
= 15V
13V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
C
- Amperes
32
28
24
20
16
12
8
4
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
5V
I
C
-
Amperes
7V
100
80
60
40
20
5V
0
0
5
10
15
20
25
30
7V
9V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
48
44
40
36
V
GE
= 15V
13V
11V
9V
1.8
V
GE
= 15V
1.6
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
I
C
- Amperes
32
28
24
20
16
12
8
4
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
5V
7V
V
CE(sat)
- Normalized
1.4
1.2
1.0
0.8
I
C
= 48A
I
C
= 24A
I
0.6
0.4
-50
-25
0
25
50
C
= 12A
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
9.5
8.5
7.5
I
C
Fig. 6. Input Admittance
60
55
50
45
T
J
= 25ºC
= 48A
I
C
-
Amperes
40
35
30
25
20
15
10
T
J
= 125ºC
25ºC
- 40ºC
V
CE
- Volts
6.5
5.5
24A
4.5
3.5
12A
2.5
5
6
7
8
9
10
11
12
13
14
15
5
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH24N170A
IXGT24N170A
Fig. 7. Transconductance
36
T
J
= - 40ºC
32
28
25ºC
125ºC
16
14
12
V
CE
= 850V
I
C
= 24A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
24
20
16
12
8
4
0
0
10
20
30
40
50
V
GE
- Volts
60
70
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
60
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1 MHz
50
Capacitance - PicoFarads
Cies
1,000
40
I
C
- Amperes
Coes
100
30
20
T
J
= 125ºC
Cres
10
0
5
10
15
20
25
30
35
40
10
R
G
= 10Ω
dV / dt < 10V / ns
0
200
400
600
800
1000
1200
1400
1600
1800
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(th)JC
- ºC / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_24N170(6N)05-07-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
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