BSN20-TAPE-7 datasheet, PDF - EEWORLD Datasheet

BSN20-TAPE-7: DescriptionTRANSISTOR 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size99KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSN20-TAPE-7 Overview

TRANSISTOR 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

	BSN20-TAPE-7	BSN20-TAPE-13
Description	TRANSISTOR 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	0.1 A	0.1 A
Maximum drain-source on-resistance	20 Ω	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF	5 pF
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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