An
IXYS
Company
Provisional Data
Old Type No.: F0400LC180
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
MAXIMUM
LIMITS
1800
1900
Extra Fast Recovery Diode
Type F0800LC180
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Page 1 of 11
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
f(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=85°C, (note 2)
Maximum average forward. T
sink
=85°C, (note 3)
D.C. forward current, T
sink
=25°C, (note 4)
Nominal RMS forward current, T
sink
=25°C, (note 2)
Peak non-repetitive surge t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
2
2
I t capacity for fusing t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
Operating temperature range
Storage temperature range
Provisional Data Sheet. Type F0800LC180 Issue 1
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
Current (I
F
) ratings have been calculated using V
T0
and r
T
(see page 2).
UNITS
V
V
WESTCODE
Date:- 2 Feb, 2004
Data Sheet Issue:- 1
MAXIMUM
LIMITS
775
368
210
1545
1304
7630
8400
291×10
353×10
3
3
UNITS
A
A
A
A
A
A
A
As
As
°C
°C
2
2
-40 to +125
-40 to +150
February, 2004
WESTCODE
An IXYS Company
Characteristics
Extra Fast Recovery Diode Type F0800LC180
V
FM
V
T0
r
T
V
T01
r
T1
V
FRM
Maximum peak forward voltage
Threshold voltage
Slope resistance
Threshold voltage
Slope resistance
Maximum forward recovery voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.05
2.60
1.494
0.692
1.498
0.690
82
I
FM
=800A
February, 2004
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS
(Note 1)
UNITS
V
V
mΩ
V
mΩ
V
I
FM
=1600A
Current range 775A-2325A (Note 2)
I
RRM
Q
ra
t
rr
I
rm
Q
ra
t
rr
I
rm
R
thJK
F
W
t
Peak reverse current
Recovered charge, 50% Chord
Reverse recovery time, 50% Chord
Reverse recovery current
Recovered charge, 50% Chord
Reverse recovery time, 50% Chord
Reverse recovery current
Current range 800A-2400A
-
di/dt = 1000A/µs
-
68
di/dt = 1000A/µs, T
j
=25°C
Rated V
RRM
-
150
30
-
-
Rated V
RRM
, T
j
=25°C
200
1.1
-
380
55
-
65
-
1.0
V
r
=50V, 50% Chord.
Double side cooled
120
-
-
0.032
-
0.064
20
-
Single side cooled
-
340
Page 2 of 11
mA
µC
µs
A
µC
µs
A
K/W
kN
g
I
FM
=800A, t
p
=500µs, di/dt=1000A/µs,
V
r
=500V, 50% Chord. (note 3)
Thermal resistance, junction to heatsink
Mounting force
Weight
Provisional Data Sheet. Type F0800LC180 Issue 1
Notes:-
1) Unless otherwise indicated T
j
=125°C.
2) V
T0
and r
T
were used to calculate the current ratings illustrated on page one.
3) Figures 3-6 were compiled using these conditions.
4) For other clamp forces consult factory.
-
-
-
10
-
I
FM
=1000A, t
p
=500µs, di/dt=200A/µs,
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
18
V
RRM
(V)
1800
V
RSM
(V)
1900
Extra Fast Recovery Diode Type F0800LC180
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of V
F
characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
where I
F
= instantaneous forward current.
4.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig.(a) below.
I.e.
(ii) Q
rr
is based on a 150µs integration time.
150
µ
s
(iii)
Provisional Data Sheet. Type F0800LC180 Issue 1
Q
rr
=
∫
i
0
K Factor
=
rr
.
dt
t
1
t
2
Page 3 of 11
V
R
dc
(V)
900
February, 2004
WESTCODE
An IXYS Company
5.0 Reverse Recovery Loss
Extra Fast Recovery Diode Type F0800LC180
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
T
SINK
=
T
J
(
MAX
)
−
E
⋅
[
k
+
f
⋅
R
thJK
]
Where
k
= 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
f
= Rated frequency in Hz at the original sink temperature.
R
thJK
= d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W
(
tot
)
=
W
(
original
)
+
E
⋅
f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R
2
=
4
⋅
V
r
C
S
⋅
di dt
Where:
V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
Provisional Data Sheet. Type F0800LC180 Issue 1
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Page 4 of 11
February, 2004
WESTCODE
An IXYS Company
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
Extra Fast Recovery Diode Type F0800LC180
I
AV
−
V
o
+
V
o
+
4
⋅
ff
2
⋅
r
s
⋅
W
AV
=
2
⋅
ff
2
⋅
r
s
Where
V
T0
= 1.494V,
r
T
= 0.692mΩ
W
AV
=
∆
T
R
th
∆
T
=
T
j
(
MAX
)
−
T
K
7.2 Calculation of V
F
using ABCD Coefficients
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
F
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
0.5500522
0.195326
-4
3.6494×10
-3
6.89769×10
125°C Coefficients
-1.3840139
0.6344428
-4
9.83261×10
-0.05634619
8.0 Frequency Ratings
9.0 Square wave ratings
10.0 Duty cycle lines
Provisional Data Sheet. Type F0800LC180 Issue 1
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
A
B
C
D
Page 5 of 11
The forward characteristic I
F
Vs V
F
, on page 6 is represented in two ways;
(i)
the well established V
o
and r
s
tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
ff
= form factor (normally unity for fast diode applications)
February, 2004
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