UNISONIC TECHNOLOGIES CO., LTD
5N60
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
5N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* R
DS(ON)
< 2.2Ω @ V
GS
=10V, I
D
= 2.5A
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
1
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - -
S - - -
S - - -
S - - -
S - - -
S - - -
S - - -
S G D D
7
-
-
-
-
-
-
-
D
8
-
-
-
-
-
-
-
D
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
5N60L-TA3-T
5N60G-TA3-T
TO-220
5N60L-TF1-T
5N60G-TF1-T
TO-220F1
5N60L-TF2-T
5N60G-TF2-T
TO-220F2
5N60L-TF3-T
5N60G-TF3-T
TO-220F
5N60L-TF3T-T
5N60G-TF3T-T
TO-220F3
5N60L-TM3-T
5N60G-TM3-T
TO-251
5N60L-TN3-R
5N60G-TN3-R
TO-252
-
5N60G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-065.M
5N60
MARKING
TO-220 / TO-220F / TO-220F1 / TO-220F2
TO-220F3 / TO-251 / TO-252
DFN-8(5×6)
Power MOSFET
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QW-R502-065.M
5N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
Single Pulsed (Note 3)
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V/ns
TO-220
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
P
D
W
TO-220F2
38
TO-251 / TO-252
54
DFN-8(5×6)
28
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 16.8mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
RATINGS
600
±30
5
5
20
210
10
4.5
100
UNIT
V
V
A
A
A
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/ TO-220F2
TO-220F3
TO-251 / TO-252
DFN-8(5×6)
TO-220
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251 / TO-252
DFN-8(5×6)
SYMBOL
RATINGS
62.5
θ
JA
160
75
1.25
3.47
θ
JC
3.28
2.3
4.46
°C/W
°C/W
UNIT
Junction to Ambient
Junction to Case
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QW-R502-065.M
5N60
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
μA
nA
V/°C
4.0
2.2
670
72
8.5
30
90
85
100
19
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
=0V, I
D
= 250μA
600
V
DS
=600V, V
GS
= 0V
Forward
V
GS
=30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25℃
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
=5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480 V, I
D
= 5A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 5A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 5A,
d
IF
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
1
100
-100
0.6
1.8
515
55
6.5
10
42
38
46
15
2.5
6.6
1.4
5
20
300
2.2
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QW-R502-065.M
5N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-065.M
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