UNISONIC TECHNOLOGIES CO., LTD
BC856/BC857/BC858
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
PNP SILICON TRANSISTOR
*Suitable for automatic insertion in thick and thin-film circuits
*Complement to BC846/BC847/BC848
ORDERING INFORMATION
Ordering Number
Package
SOT-23
SOT-23
SOT-23
SOT-323
SOT-323
SOT-323
E: Emitter
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
BC856G-x-AE3-R
BC857G-x-AE3-R
BC858G-x-AE3-R
BC856G-x-AL3-R
BC857G-x-AL3-R
BC858G-x-AL3-R
Note: Pin Assignment: C: Collector B: Base
MARKING
BC856
9AxG
BC857
9BxG
BC858
9CxG
Rank
Rank
Rank
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PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified)
RATINGS
UNIT
BC856
-80
V
Collector-Base Voltage
BC857
V
CBO
-50
V
BC858
-30
V
BC856
-65
V
Collector-Emitter Voltage
BC857
V
CEO
-45
V
BC858
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Dissipation
P
D
310
mW
Collector Current (DC)
I
C
-100
mA
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-40 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
MIN
110
TYP MAX UNIT
-15
nA
800
-90 -300 mV
-250 -650 mV
-700
mV
-900
mV
-660 -750 mV
-800 mV
150
MHz
6
pF
2
10
dB
SYMBOL
TEST CONDITIONS
I
CBO
V
CB
=-30V, I
E
=0
h
FE
V
CE
=-5V, I
C
=-2mA
I
C
=-10mA,I
B
=-0.5mA
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=-100mA,I
B
=-5mA
I
C
=-10mA,I
B
=-0.5mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-100mA,I
B
=-5mA
V
CE
=-5V,I
C
=-2mA
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-5V,I
C
=-10mA
Current Gain Bandwidth Product
f
T
V
CE
=-5V,I
C
=-10mA, f=100MHz
Output Capacitance
Cob
V
CB
=-10V,I
E
=0,f=1MHz
Noise Figure
NF
V
CE
=-5V, I
C
=-200A, f=1KHz, R
G
=2K
PARAMETER
Collector Cut-Off Current
DC Current Gain
-600
CLASSIFICATION OF h
FE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Static Characteristic
-50
-45
Collector Current, I
OUT
(mA)
-40
-35
-30
-25
-20
-15
-10
-5
-0
-0
-2
I
B
=-100uA
I
B
=-50uA
-4 -6 -8 -10 -12 -14 -16 -18 -20
Collector-Emitter Voltage , V
CE
(V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
Saturation Voltage, V
BE(SAT).
V
EC(SAT)
(V)
-100
10
-0.1
I
B
=-400uA
I
B
=-350uA
I
B
=-300uA
I
B
=-250uA
I
B
=-200uA
I
B
=-150uA
DC Current Gain, h
FE
1000
PNP SILICON TRANSISTOR
DC Current Gain
V
CE
=-5V
100
-1
-10
-100
Collector Current , I
C
(mA)
Base-Emitter on Voltage
V
CE
=-5V
I
C
=10 I
B
Collector Current, I
C
(mA)
-10
-100
V
BE(SAT)
-1
-10
-0.1
V
CE(SAT)
-1
-0.01
-0.1
-0.1
-1
-0.2
Collector Current , I
C
(mA)
Collector Output Capacitance
1000
Current Gain-Bandwidth Product, f
T
(MHz)
-0.4
-0.8
-0.6
-1.0
Base-Emitter Voltage, V
BE
(V)
-1.2
Current Gain Bandwidth Product
10
Capacitance, C
OB
(pF)
f=1MHz I
E
=0
f=1MHz I
E
=0
100
1
-1
-10
-100
Collector-Base Voltage, V
CB
(V)
10
-1
-10
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-028.F
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