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BLS6G2731S-130_15

Description
LDMOS S-band radar power transistor
File Size120KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BLS6G2731S-130_15 Overview

LDMOS S-band radar power transistor

BLS6G2731S-130
LDMOS S-band radar power transistor
Rev. 2 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
μ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.7 to 3.1
V
DS
(V)
32
P
L
(W)
130
G
p
(dB)
12
η
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of 300
μs
with
δ
of 10 %:
Output power = 130 W
Power gain = 12 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.1 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
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