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P4C1299-35CMB

Description
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
Categorystorage    storage   
File Size741KB,11 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P4C1299-35CMB Overview

ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM

P4C1299-35CMB Parametric

Parameter NameAttribute value
MakerPyramid Semiconductor Corporation
Reach Compliance Codecompli
Memory IC TypePSEUDO STATIC RAM MODULE
P4C1299/P4C1299L
ULTRA HIGH SPEED 64K x 4
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 15/20/25/35 ns (Commercial/Industrial)
– 15/20/25/35/45 ns (Military)
Low Power Operation
Single 5V±10% Power Supply
Output Enable (OE) & Chip Enable (CE
1
and
CE
2
)
Control Functions
Data Retention with 2.0V Supply (P4C1299L)
Three-State Outputs
TTL/CMOS Compatible Outputs
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil DIP, SOJ
– 28-Pin 350x550 mil LCC
DESCRIPTIOn
The P4C1299 and P4C1299L are a 262,144-bit ultra high-
speed static RAM organized as 64K x 4. The CMOS memory
requires no clock or refreshing and has equal access and
cycle times. Inputs and outputs are fully TTL-compatible.
The RAM operates from a single 5V±10% tolerance power
supply. With battery backup (P4C1299L Only), data integrity
is maintained for supply voltages down to 2.0V. Current
drain is typically 10 µA from a 2.0V supply.
Access times as fast as 15 nanoseconds are available,
permitting greatly enhanced system speeds. CMOS is
utilized to reduce power consumption.
The P4C1299 and P4C1299L are available in a 28-pin
300 mil DIP or SOJ, as well as a 28-pin 350x550 mil LCC
package, providing excellent board level densities.
FUnCTIOnAL BLOCk DIAgRAM
PIn COnFIgURATIOnS
DIP (P5, C5)
SOJ (J5)
LCC (L5)
Document #
SRAM144
REV OR
Created Nov 2012
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