RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4486Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4486Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50Ω.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
20
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P
1dB
=12.7dBm at 1950MHz
OIP
3
=27.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Gain & Return Loss
30
S21
V
D
= 3V, I
D
= 52mA
Applications
Gain, RL (dB)
InGaP HBT
SiGe BiCMOS
Si BiCMOS
10
0
-10
-20
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
S22
S11
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Frequency (GHz)
Parameter
Small Signal Gain
Min.
19.0
13.0
Specification
Typ.
Max.
Unit
Condition
20.5
22.0
dB
850MHz
14.5
16.0
dB
1950MHz
12.3
dB
2400MHz
Output Power at 1dB Compression
13.8
dBm
850MHz
11.7
12.7
dBm
1950MHz
12.4
dBm
2400MHz
Output Third Order Intercept Point
29.0
dBm
850MHz
25.5
27.5
dBm
1950MHz
26.5
dBm
2400MHz
Input Return Loss
10.5
14.5
dB
1950MHz
Output Return Loss
7.5
11.5
dB
1950MHz
Noise Figure
3.4
4.4
dB
1930MHz
Thermal Resistance
145
°C/W
junction - lead
Device Operating Voltage
3.0
V
Device Operating Current
46.0
52.0
58.0
mA
Test Conditions: V
D
=3V, I
D
=52mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, T
L
=25°C, Z
S
=Z
L
=50Ω, Bias Tee Data
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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